QG201JD datasheet(1/2 Pages) SECOS

부품명	QG201JD

상세설명	Voltage 50 ~ 1000 V 2.0Amp Surface Mount Silicon Rectifiers

PDF	2 Pages

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제조업체	SECOS [SeCoS Halbleitertechnologie GmbH]

홈페이지	http://www.secosgmbh.com

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Elektronische Bauelemente

QG201JD ~ QG207JD

Voltage 50 ~ 1000 V

2.0Amp Surface Mount Silicon Rectifiers

30-Jul-2015 Rev. C

Page 1 of 2

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES



For surface mounted applications



Low profile package



Glass Passivated Chip Junction



Ideal for automated placement



Lead free in comply with EU RoHS 2011/65/EU directives

MECHANICAL DATA



Case: SOD-123JD



Terminals: Solderable per MIL-STD-750, Method 2026



Approx. Weight:15mg 0.0053oz

MARKING

Part Number

Marking Code

Part Number

Marking Code

QG201JD

2A1

QG205JD

2A5

QG202JD

2A2

QG206JD

2A6

QG203JD

2A3

QG207JD

2A7

QG204JD

2A4

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOD-123JD

3K

7’ inch

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Rating 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, de-rate current by 20%.)

Part Number

Parameter

Symbol

QG

201JD

QG

202JD

QG

203JD

QG

204JD

QG

205JD

QG

206JD

QG

207JD

Unit

Maximum Repetitive Peak Reverse Voltage

VRRM

50

100

200

400

600

800

1000

V

Maximum RMS Voltage

VRMS

35

70

140

280

420

560

700

V

Maximum DC Blocking Voltage

VDC

50

100

200

400

600

800

1000

V

Maximum Average Forward Rectified

Current @ TA=65°C

IF(AV)

2

A

Peak Forward Surge Current, 8.3ms single

half sine-wave superimposed on rated load

IFSM

50

A

Maximum Instantaneous Forward Voltage

@ IF=2A

VF

1.1

V

TA=25°C

5

Maximum DC Reverse Current

at Rated DC Blocking Voltage

TA=125°C

IR

50

μA

Typical Junction Capacitance

1

CJ

30

pF

Typical Thermal Resistance

2

RθJL

20

°C/W

Typical Thermal Resistance

2

RθJC

40

°C/W

Operating and Storage Temperature Range

TJ,TSTG

-55~ 150

°C

Notes：

1. Measured at 1 MHz and applied reverse voltage of 4 V D.C.

2. P.C.B. mounted with 0.2 X 0.2" (5 X 5 mm) copper pad areas.

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

2.6

2.9

E

0.1

0.2

B

1.7

1.9

F

0.8

1.1

C

0.9

1.1

G

0.7

0.9

D

3.5

3.8

SOD-123JD

E

F

B

C

D

A

G

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QG201JD 데이터시트(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

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