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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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RGF1D 데이터시트(PDF) 1 Page - Vishay Siliconix |
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RGF1D 데이터시트(HTML) 1 Page - Vishay Siliconix |
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1 / 2 page  RGF1A thru RGF1M Vishay Semiconductors formerly General Semiconductor Document Number 88697 www.vishay.com 08-Feb-02 1 Surface Mount Glass Passivated Junction Fast Switching Rectifier Reverse Voltage 50 to 1000V Forward Current 1.0A Patented* 0.167 (4.24) 0.187 (4.75) 0.0065 (0.17) 0.015 (0.38) 0.030 (0.76) 0.060 (1.52) 0.196 (4.98) 0.226 (5.74) 0.094 (2.39) 0.114 (2.90) 0.100 (2.54) 0.118 (3.00) 0.040 (1.02) 0.066 (1.68) 0.098 (2.49) 0.108 (2.74) 0.006 (0.152) TYP. DO-214BA (GF1) Features • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • Ideal for surface mount automotive applications • High temperature metallurgically bonded construction • Cavity-free glass passivated junction • Capable of meeting environmental standards of MIL-S-19500 • Built-in strain relief • Easy pick and place • Fast switching for high efficiency • High temperature soldering guaranteed: 450°C/5 seconds at terminals. • Complete device submersible temperature of 265°C for 10 seconds in solder bath Mechanical Data Case: JEDEC DO-214BA, molded plastic over glass body Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.0048 oz, 0.12 g Packaging codes/options: 19/6.5K per 13” Reel (12mm Tape) 17/1.5K per 7” Reel (12mm Tape) Dimensions in inches and (millimeters) Glass-plastic encapsulation technique is covered by Patent No. 3,996,602, brazed-lead assembly by Patent No. 3,930,306 and lead forming by Patent No. 5,151,846 0.094 MAX. (2.38 MAX.) 0.220 (5.58) REF 0.066 MIN. (1.68 MIN.) 0.052 MIN. (1.32 MIN.) Mounting Pad Layout Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified. Parameter Symbol RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M Unit Device marking code RA RB RD RG RJ RK RM Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS voltage VRMS 35 70 140 280 420 560 700 V Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 V Maximum average forward rectified current at TL = 120°CIF(AV) 1.0 A Peak forward surge current 8.3ms single half sine-wave IFSM 30 A superimposed on rated load (JEDEC Method) Max. full load reverse current, full cycle average TA = 55°CIR(AV) 50 µA Typical thermal resistance(1) R ΘJA 80 °C/W R ΘJL 28 Operating junction and storage temperature range TJ,TSTG –65 to +175 °C Electrical Characteristics (TJ = 25°C unless otherwise noted) Parameter Symbol RGF1A RGF1B RGF1D RGF1G RGF1J RGF1K RGF1M Unit Maximum instantaneous forward voltage at 1.0A VF 1.30 V Maximum DC reverse current TA = 25°C IR 5.0 µA at rated DC blocking voltage TA = 125°C 100 Typical reverse recovery time at trr 150 250 500 ns IF = 0.5A, IR = 1.0A, Irr = 0.25 A Typical junction capacitance at 4.0V, 1MHz CJ 8.5 pF Note: (1) Thermal resistance from junction to ambient and from junction to lead, P.C.B. mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas ® |
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