Elektronische Bauelemente

SMS123

N-Ch Enhancement Mode Power MOSFET

28-Apr-2017 Rev. C

Page 1 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

RoHS Compliant Product

A Suffix of “-C” specifies halogen & lead-free

DESCRIPTIONS

The SMS123 is N-Channel enhancement MOS Field

Effect Transistor. Uses advanced trench technology and

design to provide excellent RDS (ON)with low gate charge.

This device is suitable for use in DC-DC conversion, load

switch and level shift.

MECHANICAL DATA

Trench Technology

Supper high density cell design

Excellent ON resistance

Extremely Low Threshold Voltage

APPLICATION

DC-DC converter circuit

Load Switch

MARKING

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOT-23

3K

7 inch

Parameter

Symbol

Rating

Unit

Drain – Source Voltage

100

V

Gate – Source Voltage

±20

V

Continuous Drain Current

1

0.17

A

Pulsed Drain Current(tp=10µs)

0.68

A

Continuous Source-Drain Diode Current

0.17

A

Power Dissipation

0.35

W

Thermal Resistance from Junction to Ambient

1

357

°C / W

Lead Temperature for Soldering Purposes

(1/8’’ from case for 10s)

260

°C

Operating Junction & Storage Temperature Range

150, -55~150

°C

SOT-23

B123

Top View

A

L

C B

D

G

H

J

F

K

E

1

2

3

1

2

3

Millimeter

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

2.70

3.10

G

0.09

0.18

B

2.10

2.65

H

0.35

0.65

C

1.20

1.40

J

0.08

0.20

D

0.89

1.17

K

0.6 REF.

E

1.78

2.04

L

0.95 BSC.

F

0.30

0.50