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SSD01N65J 데이터시트(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

부품명 SSD01N65J
상세설명  N-Ch Enhancement Mode Power MOSFET
PDF  3 Pages
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제조업체  SECOS [SeCoS Halbleitertechnologie GmbH]
홈페이지  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSD01N65J 데이터시트(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

  SSD01N65J Datasheet HTML 1Page - SeCoS Halbleitertechnologie GmbH SSD01N65J Datasheet HTML 2Page - SeCoS Halbleitertechnologie GmbH SSD01N65J Datasheet HTML 3Page - SeCoS Halbleitertechnologie GmbH  
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Elektronische Bauelemente
SSD01N65J
1A, 650V, RDS(ON) 14
N-Ch Enhancement Mode Power MOSFET
4-Nov-2015 Rev.A
Page 2 of 3
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (T
A=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
V(BR)DSS
650
-
-
V
VGS=0, ID=250µA
Diode Forward Voltage
2
VSD
-
-
1.5
V
VGS=0, IS=1A
Zero Gate Voltage Drain Current
IDSS
-
-
100
µA
VDS=600V, VGS=0
Gate-Body Leakage Current
2
IGSS
-
-
±100
nA
VDS=0V, VGS= ±20V
On Characteristics
2
Gate-Threshold Voltage
VGS(th)
2
-
4
V
VDS=VGS, ID=250µA
Static Drain-Source On-Resistance
RDS(ON)
-
-
14
VGS=10V, ID=0.6A
Dynamic Characteristics
Input Capacitance
Ciss
-
210
-
Output Capacitance
Coss
-
28
-
Reverse Transfer Capacitance
Crss
-
4.2
-
pF
VDS=25V
VGS=0
f=1MHz
Switching Characteristics
Total Gate Charge
Qg
-
5
-
Gate-Source Charge
Qgs
-
2.7
-
Gate-Drain Charge
Qgd
-
2
-
nC
VDS=480V
VGS=10V
ID=4A
Turn-on Delay Time
Td(on)
-
8
-
Rise Time
Tr
-
21
-
Turn-off Delay Time
Td(off)
-
18
-
Fall Time
Tf
-
24
-
nS
VDD=300V
VGS=10V
RG=18
ID=1A
Notes:
1.
EAS condition: L=10mH, IL=1A, VDD=50V, VGS=10V, RG=25 , Starting TJ=25°C.
2.
Pulse test：Pulse width≦300µs, duty cycle≦2%.



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