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SSD50N03J 데이터시트(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH

부품명 SSD50N03J
상세설명  N-Ch Enhancement Mode Power MOSFET
PDF  3 Pages
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제조업체  SECOS [SeCoS Halbleitertechnologie GmbH]
홈페이지  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSD50N03J 데이터시트(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SSD50N03J
50A, 30V, RDS(ON) 11m
N-Ch Enhancement Mode Power MOSFET
13-Dec-2016 Rev.B
Page 2 of 3
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
ELECTRICAL CHARACTERISTICS (T
A=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
30
-
-
V
VGS=0, ID=250µA
Drain-Source Leakage Current
IDSS
-
-
1
µA
VDS=30V, VGS=0
Gate-Source Leakage Current
IGSS
-
-
±100
nA
VDS=0V, VGS= ±20V
On Characteristics
1
Gate-Threshold Voltage
VGS(th)
1
1.5
3
V
VDS=VGS, ID=250µA
-
7
11
VGS=10V, ID=25A
Static Drain-Source On-Resistance
RDS(ON)
-
9
16
m
VGS=5V, ID=20A
Forward Transfer conductance
gfs
15
-
-
S
VDS=5V, ID=20A
Dynamic Characteristics
Input Capacitance
Ciss
-
2000
-
Output Capacitance
Coss
-
280
-
Reverse Transfer Capacitance
Crss
-
160
-
pF
VDS=15V
VGS=0
f=1MHz
Switching Characteristics
Total Gate Charge
Qg
-
23
-
Gate-Source Charge
Qgs
-
7
-
Gate-Drain (“Miller”) Change
Qgd
-
4.5
-
nC
VDS=10V
VGS=10V
ID=25A
Turn-on Delay Time
Td(on)
-
10
-
Rise Time
Tr
-
8
-
Turn-off Delay Time
Td(off)
-
30
-
Fall Time
Tf
-
5
-
nS
VDD=15V
VGS=10V
RG=1.8
ID=20A
Source-Drain Diode Characteristics
Diode Forward Voltage
1
VSD
-
-
1.2
V
IS=25A, VGS=0
Continuous Source Current
IS
-
-
50
A
Pulsed Source Current
ISM
-
-
200
A
Notes:
1.
Pulse Test : Pulse width
≤300µs, duty cycle ≤2%.



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