Elektronische Bauelemente

SSF7500

Ω

Ω

Ω

N-Channel Enhancement Mode Power MOSFET

04-Dec-2015 Rev.A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Static

Drain-Source Breakdown Voltage

30

-

-

V

Gate-Threshold Voltage

0.4

0.72

1.2

V

Gate-Source Leakage Current

-

±10

±100

nA

Drain-Source Leakage Current

-

0.01

1

µA

-

58

70

-

61

75

-

69

85

Static Drain-Source On-Resistance

-

80

110

m

Dynamic

Total Gate Charge

1,2

-

4.8

-

Gate-Source Charge

1,2

-

0.5

-

Gate-Drain Change

1,2

-

0.7

-

nC

Input Capacitance

-

447

-

Output Capacitance

-

34

-

Reverse Transfer Capacitance

-

22

-

pF

f=1MHz

Switching

1,2

Turn-On Delay Time

-

2

-

Rise Time

-

38

-

Turn-Off Delay Time

-

812

-

Fall Time

-

64

-

nS

Drain-Source Diode

Maximum Continuous Drain-Source

Diode Forward Current

-

-

0.5

V

Diode Forward Voltage

-

0.77

1.2

V

Notes:

1.

Pulse Test : Pulse width≤300µs, duty cycle≤2%.

2.

Essentially independent of operating temperature typical characteristics.

3.

solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz square pad of copper.

4.

The maximum current rating is limited by the package.