SSG60P05J datasheet(1/3 Pages) SECOS

부품명	SSG60P05J

상세설명	P-Ch Enhancement Mode Power MOSFET

PDF	3 Pages

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제조업체	SECOS [SeCoS Halbleitertechnologie GmbH]

홈페이지	http://www.secosgmbh.com

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1 / 3 page

Elektronische Bauelemente

SSG60P05J

-5 A, -60 V, RDS(ON) 80 mΩ

Ω

P-Ch Enhancement Mode Power MOSFET

10-Feb-2017 Rev. B

Page 1 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

A

H

B

M

D

C

J

K

F

L

E

N

G

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

SSG60P05J uses advanced trench technology and design

to provide excellent RDS(ON) with low gate charge. It can be

used in a wide variety of applications.

FEATURES

High density cell design for ultra low RDS(ON)

Fully characterized avalanche voltage and current

Excellent package for good heat dissipation

APPLICATIONS

Power switching application

Hard switched and high frequency circuits

DC-DC converter

MARKING

PACKAGE INFORMATION

Package

MPQ

Leader Size

SOP-8

4K

13 inch

MAXIMUM RATINGS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDS

-60

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

ID

-5

A

Pulsed Drain Current

1

IDM

-25

A

Thermal Resistance from Junction to Ambient

2

RθJA

100

°C / W

Lead Temperature for Soldering Purposes@1/8’’ from

case for 10s

TL

260

°C

Operating Junction and Storage Temperature Range

TJ, TSTG

150, -55~150

°C

Q60P05

= Date Code

S

G

D

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

5.80

6.20

H

0.33

0.51

B

4.700

5.10

J

0.375 REF.

C

3.80

4.00

K

45°REF.

D

0°

8°

L

1.35

1.75

E

0.40

1.27

M

0.10

0.25

F

0.17

0.25

N

0.25 REF.

G

1.27 TYP.

SOP-8

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