Elektronische Bauelemente

SSG3110

Ω

Ω

Ω

Dual-

Enhancement Mode Power MOSFET

02-Sep-2016 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Drain-Source Breakdown Voltage

100

-

-

V

Gate-Threshold Voltage

1

-

2.5

V

Gate-Body Leakage Current

-

-

±100

nA

-

-

1

Zero Gate Voltage Drain Current

-

-

5

µA

-

260

310

Drain-Source On-Resistance

2

-

270

320

m

Forward Transconductance

-

4

-

S

Input Capacitance

-

508

-

Output Capacitance

-

29

-

Reverse Transfer Capacitance

-

16.4

-

pF

f=1MHz

Total Gate Charge

-

9.1

-

Gate-Source Charge

-

2

-

Gate-Drain Charge

-

1.4

-

nC

Turn-On Delay Time

-

2

-

Rise Time

-

21.6

-

Turn-Off Delay Time

-

11.2

-

Fall Time

-

18.8

-

nS

Source-Drain Diode

Diode Forward Voltage

2

-

-

1.2

V

Continuous Source Current

1

-

-

2.2

A

Pulsed Source Current

3

-

-

5.5

A

Reverse Recovery Time

-

17.5

-

nS

Reverse Recovery Charge

-

14

-

nC

Notes:

1.

Surface mounted on a 1 inch

2.

Pulse Test: Pulse width≦300µs, duty cycle≦2%.

3.

The power dissipation is limited by 150°C junction temperature.