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BAS40 데이터시트(PDF) 1 Page - Chip Integration Technology Corporation |
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BAS40 데이터시트(HTML) 1 Page - Chip Integration Technology Corporation |
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1 / 3 page ![]() 1 Dimensions in inches and (millimeters) Features ■ ■ Mechanical data ■ Maximum ratings and electrical characteristics Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. OC Outline ■ • • S • • • • • Low current rectification and high speed switching. mall surface mount type. Up to 200mA current capability. Low forward voltage drop (VF = 1.00V typ. @40mA). Silicon epitaxial planar chip, metal silicon junction. Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228 Suffix "G" indicates Halogen-free part, ex.BAS40G. SOT-23 • Case : Molded plastic, SOT-23 • Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 • Mounting Position : Any • Weight : Approximated 0.008 gram • Epoxy:UL94-V0 rated flame retardant Marking code 0.035 (0.89) 0.044 (1.11) 0.110 (2.80) 0.120 (3.04) .070(1.78) .081(2.04) 0.035 (0.89) 0.040 (1.02) 0.015 (0.37) 0.020 (0.50) A B C Document ID : DS-22K1Q Issued Date : 2010/05/05 Revised Date : 2012/05/31 Revision : C A C B BAS40 A C B BAS40-06 A C B BAS40-05 A C B BAS40-04 Characteristic Symbol Peak Repetitive Reverse Voltage Marking code V RRM 40 UNIT V OC Power Dissipation 150 P D -65 ~ +150 Junction Temperature Forward Continuous Current T J O TA = 25 C I F T STG mA mW BAS40 BAS40-06 B1 L2 Storage Temperature +150 OC 120 BAS40-04 CB BAS40-05 45 Working Peak Reverse Voltage DC Blocking Voltage V RWM V R I R V F Characteristic Symbol MIN. MAX. UNIT Diode Capacitance Forward Voltage V pF 0.40 5.0 I = 1mA F V = 0V, f = 1.0MHz R Reverse Current V = 30V R Thermal resistance from junction to ambient uA 1 TYP. I = 40mA F 1.0 I = 10mA F 0.56 10 V = 40V R Repetitive Peak forward surge current 120 mA Non-repetitive peak forward current I FSM I FSM Operating ambient temperature -65 ~ +150 OC T amb 200 C d R θJA K /W 500 @ t <10ms P @ t ≤1s;δ≤0.5 P mA BAS40 / 04 / 05 / 06 200mA Surface Mount Small Signal Diodes |
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