Elektronische Bauelemente

SSG4822J

Ω

Ω

Ω

Dual-N Enhancement Mode Power MOSFET

10-Feb-2017 Rev. C

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test condition

Static

Drain-Source Breakdown Voltage

30

-

-

V

Zero Gate Voltage Drain Current

-

-

1

µA

Gate-Body Leakage Current

-

-

±100

nA

Gate-Threshold Voltage

1

-

3

V

-

-

16

Drain-Source On-Resistance

3

-

-

26

m

Forward Transfer Conductance

3

-

20

-

S

Diode Forward Voltage

3

-

-

1

V

Dynamic

4

Input Capacitance

-

1250

-

Output Capacitance

-

180

-

Reverse Transfer Capacitance

-

110

-

pF

f=1.0MHz

Source-Drain Diode

4

Turn-On Delay Time

-

7.5

-

Rise Time

-

6.5

-

Turn-Off Delay Time

-

25

-

Fall Time

-

5

-

nS

10V

-

23

-

Total Gate Charge

4.5V

-

11.2

-

Gate-Source Charge

-

2.6

-

Gate-Drain (“Miller”) Charge

-

4.2

-

nC

Notes:

1.

The value in any given application depends on the user’s specific board design. The current rating is based on the t≦10s thermal

resistance rating.

2.

Repetitive rating : Pulse width limited by junction temperature.

3.

Pulse Test : Pulse width≦300µs, duty cycle≦2%.

4.

Guaranteed by design, not subject to production testing.