SSG7328J datasheet(1/3 Pages) SECOS

부품명	SSG7328J

상세설명	Dual-P Enhancement Mode Power MOSFET

PDF	3 Pages

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제조업체	SECOS [SeCoS Halbleitertechnologie GmbH]

홈페이지	http://www.secosgmbh.com

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Elektronische Bauelemente

SSG7328J

-8 A, -30 V, RDS(ON) 21 mΩ

Ω

Dual-P Enhancement Mode Power MOSFET

10-Feb-2017 Rev. B

Page 1 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

A

H

B

M

D

C

J

K

F

L

E

N

G

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

DESCRIPTION

The SSG7328J uses advanced trench technology to

provide excellent on-resistance, low gate charge and

operation with gate voltages as low as 2.5V. The device is

suitable for use as a load switch or in PWM applications.

It may be used in a common drain arrangement to a

bidirectional blocking switch.

FEATURES

Simple Drive Requirement

Lower On-resistance

Low Gate Charge

PACKAGE INFORMATION

MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

VDS

-30

V

Gate-Source Voltage

VGS

±20

V

Continuous Drain Current

ID

-8

A

Pulsed Drain Current

1

IDM

-32

A

Power Dissipation

2

PD

1.4

W

Operating Junction & Storage Temperature Range

TJ, TSTG

150, -55 ~ 150

°C

Thermal Resistance Ratings

Thermal Resistance Junction-ambient

2

RθJA

89

°C / W

Package

MPQ

Leader Size

SOP-8

4K

13’’

SOP-8

S1

G1

G2

S2

D1

D2

Millimeter

REF.

Min.

Max.

REF.

Min.

Max.

A

5.80

6.20

H

0.35

0.49

B

4.80

5.00

J

0.375 REF.

C

3.80

4.00

K

45°

D

0°

8°

L

1.35

1.75

E

0.40

0.90

M

0.10

0.25

F

0.19

0.25

N

0.25 REF.

G

1.27 TYP.

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