APM4500K datasheet(2/13 Pages) ANPEC

2 / 13 page

Rev. A.2 - May., 2003

www.anpec.com.tw

APM4500

Symbol

Parameter

Test Condition

Min. Typ. Max.

Unit

Static

N-Ch

BVDSS

Drain-Source Breakdown

Voltage

VGS=0V , IDS=250

µA

P-Ch

-20

VDS=16V , VGS=0V

N-Ch

IDSS

Zero Gate Voltage Drain

Current

VDS=-16V , VGS=0V

P-Ch

-1

µA

VDS=VGS , IDS=250

µA

N-Ch

0.5

0.7

VGS(th)

Gate Threshold Voltage

VDS=VGS , IDS=-250

µA

P-Ch -0.45

-1

VGS=

±12V , VDS=0V

N-Ch

±100

IGSS

Gate Leakage Current

VGS=

±12V , VDS=0V

P-Ch

±100

VGS=4.5V , IDS=8A

VGS=2.5V , IDS=5.2A

N-Ch

VGS=-4.5V , IDS=-4.3A

RDS(ON)a

Drain-Source On-state

Resistance

VGS=-2.5V , IDS=-2A

P-Ch

105

115

Ω

ISD=1.7A , VGS=0V

N-Ch

0.8

1.3

VSDa

Diode Forward Voltage

ISD=-1.25A , VGS=0V

P-Ch

-0.7

-1.3

Electrical Characteristics (T

A = 25°C unless otherwise noted)

Absolute Maximum Ratings (T

A = 25°C unless otherwise noted)

Symbol

Parameter

N-Channel

P-Channel

Unit

VDSS

Drain-Source Voltage

-20

VGSS

Gate-Source Voltage

±12

ID*

Maximum Drain Current – Continuous

-4.3

IDM

Maximum Drain Current – Pulsed

-17

TA=25

°C

2.5

Maximum Power Dissipation

A=100

°C

1.0

Maximum Junction Temperature

150

°C

TSTG

Storage Temperature Range

-55 to 150

°C

RθjA

Thermal Resistance – Junction to Ambient

62.5

°C/W

* Surface Mounted on FR4 Board, t

≤ 10 sec.

Notes

: Pulse test ; pulse width

≤300µs, duty cycle ≤ 2%

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