SSRF06N70SL datasheet(2/5 Pages) SECOS

2 / 5 page

Elektronische Bauelemente

SSRF06N70SL

6A , 700V , RDS(ON) 1.7

N-Ch Enhancement Mode Power MOSFET

25-Sep-2014 Rev. A

Page 2 of 5

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Teat Conditions

Static

Drain-Source Breakdown Voltage

BVDSS

700

VGS=0, ID= 250µA

Gate-Threshold Voltage

VGS(th)

VDS=VGS, ID=250µA

Gate-Source Leakage Current

IGSS

±100

VGS= ±30V , VDS=0

Drain-Source Leakage Current

IDSS

µA

VDS=700V, VGS=0

Static Drain-Source On-Resistance

RDS(ON)

1.35

1.7

VGS=10V, ID=3A

Total Gate Charge

2,3

21.94

Gate-Source Charge

2,3

Qgs

6.06

Gate-Drain Change

2,3

Qgd

8.82

ID=6A

VDS=560V

VGS=10V

Turn-on Delay Time

2,3

Td(on)

Rise Time

2,3

36.93

Turn-off Delay Time

2,3

Td(off)

Fall Time

2,3

36.53

VDD=350V

ID=6A

RG=25

Input Capacitance

Ciss

1039

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

3.88

VGS =0

VDS=25V

f =1.0MHz

Source-Drain Diode

Diode Forward Voltage

VSD

1.4

IS=6A, VGS=0

Continuous Source Current

Pulsed Source Current

ISM

Integral Reverse P-N

Junction Diode in the

MOSFET

Reverse Recovery Time

Trr

494

Reverse Recovery Charge

Qrr

3.42

µC

IS=6A,VGS=0,

dlF/dt=100A/µS

Notes:

L=30mH, IAS=5A, VDD=140V, RG=25

, starting TJ=25°C

Pulse Test: Pulse width ≦300µS, Duty cycle≦2%

Essentially independent of operating temperature.

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