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EC736014AT 데이터시트(PDF) 1 Page - E-CMOS Corporation |
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EC736014AT 데이터시트(HTML) 1 Page - E-CMOS Corporation |
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1 / 6 page ![]() EC736014 60V 、 、 、 、60A N-Channel E-CMOS Corp. (www.ecmos.com.tw) Page 1 of 6 6B18N-Rev.F001 Description The EC736014 is a new generation of middle voltage and high current N–Channel enhancement mode trench power MOSFET. This new technology increases the device reliability and electrical parameter repeatability. EC736014 is assembled in high reliability and qualified assembly house. Features and Benefits Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current Application Power switching application Absolute Maximum Ratings Parameter Max. Units ID@Tc=25ْ C Continuous drain current,VGS@10V 60 ID@Tc=100ْC Continuous drain current,VGS@10V 42 IDM Pulsed drain current ① 240 A PD@TC=25ْC Power dissipation 115 W PD@TC=25ْC Linear derating factor 0.74 W/ Cْ VGS Gate-to-Source voltage ±20 V EAS Single pulse avalanche energy ② 235 mJ EAR Repetitive avalanche energy TBD TJ TSTG Operating Junction and Storage Temperature Range –55 to +175 ْC Thermal Resistance Parameter Min. Typ. Max. Units RθJC Junction-to-case — 1.31 — RθJA Junction-to-ambient — — 62 ℃/W |
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