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EC736014D 데이터시트(PDF) 1 Page - E-CMOS Corporation |
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EC736014D 데이터시트(HTML) 1 Page - E-CMOS Corporation |
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1 / 7 page ![]() EC736014D 60V 、 、 、 、60A N-Channel E-CMOS Corp. (www.ecmos.com.tw) Page 1 of 7 5A21N-Rev.F001 VDSS 60V RDS(on) 12m (typ.) ID 60A Description It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Features and Benefits: Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 175℃ operating temperature Main Product Characteristics Absolute Maximum Ratings Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, V GS @ 10V① 60 ID @ TC = 100°C Continuous Drain Current, V GS @ 10V ① 42 IDM Pulsed Drain Current 240 A Power Dissipation 115 W PD @TC = 25°C Linear Derating Factor 0.74 W/°C VDS Drain-Source Voltage 60 V VGS Gate-to-Source Voltage ± 20 V EAS Single Pulse Avalanche Energy @ L=0.3mH 235 mJ IAS Avalanche Current @ L=0.3mH 39 A TJ TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C |
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유사한 설명 - EC736014D |
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