LLDB3/LLDB4

C

Weight: 0.05 grams (approx.)

=25°C

Mechanical Data

1 of 2

Features

!

!

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

!

!

!

Mounting Position: Any

!

Marking: Type Number

A

SILICON BIDIRECTIONAL DIACS

ABSOLUTE RATINGS

Power Dissipation on Printed

Cir cuit(L=10mm)

Repetitive Peak on-state

Tp=10uS

Current

Storage and Operating Juntion Temperature

℃

Min

28

Typ

32

Max

36

Output Voltage*

Min

V

Breakover Current*

Max

uA

Rise Time*

Typ

uS

uA

See FIG 3

See FIG 3

Leakage Current*

V

Min

Dynamic Breakover Voltage

See FIG 1

5

1 △V1

Breakover Voltage*

C=22nf**

See Diagram 1

V

Breakover Voltage Symmetry

See Diagram 1

C=22nf**

V

UNITS

A

mW

ELECTRICAL CHARACTERISTICS

PAPRAMETERS

TEST CONDITIONS

150

2.0

-40 to +125

VALUE

PARAMETERS

VALUE

UNITS

SYMBOL

Pc

SYMBOLS

See FIG 2

3

Max

10

1.5

Max

tr

5

100

C=22nf**

±

±

NOTE:* Electrical characteristics applicable in both forward and reverse directions.

** Connected in parallel with the devices.

!

Lead Free: For RoHS / Lead Free Version

The three layer, two terminal, axial lead,hermetically sealed diacs are designed

specifically for triggering thyristors. They demonstrate low breakover current at

breakover voltage as they withstand peak pulse current, The breakover symmetry is

within three volts (DB3,DB4). These diacs are intended for use in thyrisitors phase

control , circuits for lamp dimming,universa motor speed control ,and heat control.

Case: MiniMELF Glass Case (SOD-80)

Polarity: Color band denotes cathode end

MiniMELF

Dim

MIn

Max

A

3.30

3.70

B

1.30

1.60

C

0.28

0.50

All Dimensions in mm

A

B

35

45

45

LLDB3/LLDB4

LLDB3 / LLDB4

LLDB3

LLDB4

Z ibo Seno Electronic Engineering Co., Ltd.

www.senocn.com

Alldatasheet