NLSF3T125

http://onsemi.com

2

Figure 2. QFN − 16 Pinout (Top View)

Y2

GND

Y3

A3

A1

OE4

A4

Y4

Y1

NC

OE2

A2

NC

OE3

Exposed Pad (EP)

1

3

4

5

678

9

10

11

12

13

14

15

16

2

MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

DC Supply Voltage

– 0.5 to + 7.0

V

DC Input Voltage

– 0.5 to + 7.0

V

DC Output Voltage

Output in 3−State

High or Low State

– 0.5 to + 7.0

V

Input Diode Current

− 20

mA

± 20

mA

DC Output Current, per Pin

± 25

mA

± 75

mA

Power Dissipation in Still Air,

QFN Packages

500

mW

Storage Temperature

– 65 to + 150

°C

Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If

stress limits are exceeded device functional operation is not implied, damage may occur and reliability may be affected. Functional operation

should be restricted to the Recommended Operating Conditions.

RECOMMENDED OPERATING CONDITIONS

Symbol

Parameter

Min

Max

Unit

DC Supply Voltage

2.0

5.5

V

DC Input Voltage

0

5.5

V

DC Output Voltage

Output in 3−State

High or Low State

0

0

5.5

V

Operating Temperature

− 40

+ 85

°C

Input Rise and Fall Time

0

20

ns/V

This device contains protection

circuitry to guard against damage

due to high static voltages or electric

fields. However, precautions must

be taken to avoid applications of any

voltage higher than maximum rated

voltages to this high−impedance cir-

range GND

Unused inputs must always be

tied to an appropriate logic voltage

Unused outputs must be left open.