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AME902NE 데이터시트(PDF) 1 Page - Analog Power |
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AME902NE 데이터시트(HTML) 1 Page - Analog Power |
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1 / 5 page ![]() Analog Power AME920NE Dual N-Channel 20-V (D-S) MOSFET VDS (V) ID (A) 11 9 Symbol Limit Units VDS 20 VGS ±12 TA=25°C 11 TA=70°C 9 IDM 40 IS 7 A TA=25°C 1.5 TA=70°C 1 TJ, Tstg -55 to 150 °C Symbol Maximum Units 83 120 Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Pulsed Drain Current b Continuous Source Current (Diode Conduction) a THERMAL RESISTANCE RATINGS °C/W Parameter Operating Junction and Storage Temperature Range ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED) V Parameter Drain-Source Voltage Maximum Junction-to-Ambient a Gate-Source Voltage PRODUCT SUMMARY 20 rDS(on) (mΩ) 9.9 @ VGS = 4.5V 14 @ VGS = 2.5V Power Dissipation a t <= 10 sec Steady State RθJA ID A PD W Continuous Drain Current a Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed Typical Applications: • Power Routing • Li Ion Battery Packs • Level Shifting and Driver Circuits DFN2x3 © Preliminary 1 Publication Order Number: DS_AME920NE_1B |
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