1

Dimensions in inches and (millimeters)

■ Features

O

C

■ Outline

Fast switching.

•

ESD improved capability.

•

Low gate charge.

•

Low reverse transfer capacitances.

•

100% single pulse avalanche energy test.

•

TO-220AB

MH07N65CT

650V Silicon N-Channel Power MOSFET

PARAMETER

Continuous Drain Current

Pulsed Drain Current(1)

Repetitive Avalanche Energy(1)

Single Pulse Avalanche Energy(2)

Power Dissipation

Maximum temperature for soldering

Drain-Source Voltage

Avalanche Current(1)

Document ID : DS-21M66

Revised Date : 2015/09/16

Revision : C1

Gate-Source Voltage

CONDITIONS

Symbol

V

D S S

T

L

I

A R

MH07N65CT

±30

450

UNIT

V

mJ

I

D

300

100

7

A

I

D M

E

A S

54

28

650

3.3

A

V

G S

E

A R

W

mJ

P

D

V

O

Derating factor above 25 C

• Epoxy : UL94-V0 rated flame retardant.

.

• Case : JEDEC TO-220F molded plastic body

• Terminals : Solder plated, solderable per

ed.

• Polarity: As mark

.

• Mounting Position : Any

.

• Weight : Approximated 2.25 gram

Continuous Drain Current

O

T = 100 C

C

4.5

0.8

O

W/ C

Operating and Storage Temperature Range

T , T

J

S T G

-55 ~ +150

Gate source ESD

V

E S D ( G - S )

3000

V

HBM-C = 100pf, R = 1.5kΩ

Peak Diode Recovery dv/dt(3)

dV/dt

5.0

V/ns

NOTE : 1.Repetitive rating; pulse width limited by maximum junction temperature.

O

2.L=10.0mH, I = 10.5A, Start T = 25 C.

D

J

O

3.I

=7A,di/dt ≤100A/us, V ≤BV , Start T = 25 C.

S D

D D

D S

J

Drain

Source

Gate

Marking code

N

N

H

G

E

A

C1

F

C

D

symbol

Dimensions in inches(millimeters)

A

B

B1

C

C1

D

E

F

G

H

L

N

Q

ØP

Min

Max

10.10

10.50

15.0

16.0

8.90

9.50

4.30

4.80

2.30

3.00

1.20

1.40

0.70

0.90

0.35

0.55

1.17

1.37

3.30

3.80

12.70

14.70

2.34

2.74

2.40

3.00

3.70

3.90