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MHU07N65 데이터시트(PDF) 2 Page - Chip Integration Technology Corporation

부품명 MHU07N65
상세설명  Silicon N-Channel Power MOSFET
PDF  10 Pages
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제조업체  CITC [Chip Integration Technology Corporation]
홈페이지  http://www.citcorp.com.tw/english/index.php
Logo CITC - Chip Integration Technology Corporation

MHU07N65 데이터시트(HTML) 2 Page - Chip Integration Technology Corporation

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O
■ Electrical characteristics(T = 25 C unless otherwise specified)
C
PARAMETER
Gate to Source Forward Leakage
Gate Threshold Voltage
Forward Trans conductance
Input Capacitance
Output Capacitance
Drain to Source Breakdown Voltage
Drain to Source Leakage Current
Gate to Source Reverse Leakage
Drain-to-Source On-Resistance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Continuous Source Current
Diode Forward Voltage
Reverse recovery time
Reverse recovery charge
Turn-off Delay Time
Maximum Pulse Current
Bvdss Temperature Coefficient
■ ON Characteristics
PARAMETER
PARAMETER
PARAMETER
■ Dynamic Characteristics
■ Resistive Switching Characteristics
V
= 0V, I = 250µA
G S
D
CONDITIONS
Symbol
V
D S S
I
G S S ( R )
I
D S S
MIN.
650
TYP.
MAX.
UNIT
V
µA
I
G S S ( F )
-10
10
100
1
Δ
BV
/ΔT
D S S
J
0.67
O
V/ C
O
I = 250µA, Reference 25 C
D
V
= 650V, V
= 0V, T = 25°C
D S
G S
a
V
= 520V, V
= 0V, T = 125°C
D S
G S
a
V
= +20V
G S
V
= -20V
G S
V
G S ( t h )
V
2.0
R
D S ( o n )
Ω
1.1
1.4
4.0
V
= V , I = 250µA
D S
G S
D
V
= 10V, I = 3.5A
G S
D
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
g
f s
C
o s s
C
r s s
S
pF
C
i s s
4.5
93
1080
6.5
V
= 15V, I = 3.5A
D S
D
V
= 25V, V
= 0V, f = 1.0MHz
D S
G S
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Total Gate Charge
Gate toSource Charge
Gate to Drain (”Miller”) Charge
Fail Time
ns
tr
td
( O F F )
td
( O N )
36
10
11
I = 7A, V
= 520V, V
= 10V, R = 9.1Ω
D
D D
G S
G
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
nC
Q
g s
Q
g d
Q
g
8
5
24
I = 7A, V
= 520V, V
= 10V
D
D D
G S
tf
18
■ Source-Drain Diode Characteristics
PARAMETER
I
S
ns
Q
r r
I
S M
V
S D
t
r r
1.5
nC
1200
280
28
7
V
A
I = 7.0A, V
= 0V
S
G S
O
I = 7A, T = 25 C, dI /dt = 100A/μs,
S
J
F
V
= 0V
G S
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
■ Thermal characteristics
PARAMETER
Thermal Resistance
Junction to Ambient
CONDITIONS
Symbol
R
θ J C
MIN.
TYP.
MAX.
UNIT
O C/W
R
θ J A
1.32
62
Junction to Case
■ Gate-source Zener Diode
PARAMETER
Gate-Source Breakdown Voltage
CONDITIONS
Symbol
V
G S O
MIN.
TYP.
MAX.
UNIT
V
I
= ±1mA(open Drain)
G S
30
Boby Diode
Boby Diode
Document ID : DS-22M75
Revised Date : 2015/08/24
Revision : C
Pulse Width tp≤300µs,δ≤2%
Pulse Width tp≤300µs,δ≤2%
MHU07N65
Silicon N-Channel Power MOSFET
Chip Integration Technology Corporation
■ OFF Characteristics



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