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FLASH6_C3 데이터시트(PDF) 2 Page - ams AG

부품명 FLASH6_C3
상세설명  ANALOG IP BLOCK FLASH6 - CMOS 6-Bit FLASH A/D CONVERTER
PDF  9 Pages
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제조업체  AMSCO [ams AG]
홈페이지  http://www.ams.com
Logo AMSCO - ams AG

FLASH6_C3 데이터시트(HTML) 2 Page - ams AG

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Data Sheet : FLASH6 - C35
Revision B, 07.09.02
Page2of9
TECHNICAL DATA
(Tjunction = -40 to 125 °C, VDDA=VDD=+3.0V to +3.6V, fclk = 100MHz, VREFP and VREFN as specified, pad resistors as specified in the
functional block diagram, unless otherwise specified)
DC ACCURACY
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Resolution (No missing Code)
6
6
6
Bit
DNL
Differential Linearity Error
-0.8
±0.4
+0.8
LSB
INL
Integral Linearity Error
-0.8
±0.4
+0.8
LSB
OFF
Offset Error
-2
+2
LSB
GAINERR
Gain Error
-2
+2
LSB
CHARACTERISTICS
Symbol
Parameter
Conditions
Min
Typ
Max
Units
IBIAS
Bias sink current
30
uA
REFERENCE CHARACTERISTICS
Symbol
Parameter
Conditions
Min
Typ
Max
Units
VREFP
Pos. Reference Voltage
1.8
2.4
2.8
V
VREFN
Neg. Reference Voltage
0.35
0.4
0.6
V
VREF
Difference between VRP and VRN
VREFP-VREFN
1.2
2
2.45
V
Rref
Reference Impedance
1)
380
Ohm
TKRref
1.2
mOhm/K
ANALOG INPUT
Symbol
Parameter
Conditions
Min
Typ
Max
Units
Vin
Input Voltage Range
VREFN
VREFP
V
Rin
Input Impedance
100
MOhms
Cin
5pF
AC ACCURACY (VREFP=2.4V, VREFN=0.4V)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
THD
Total Harmonic Distortion
fin=1MHz
-41.3
dB
THD
Total Harmonic Distortion
fin=30MHz
-41.3
dB
SFDR
Spurious Free Dynamic Range
fin=1MHz
46.2
dB
SFDR
Spurious Free Dynamic Range
fin=30MHz
46.2
dB
SNR
Signal to Noise Ratio
fin=1MHz
35.88
dB
SNR
Signal to Noise Ratio
fin=30MHz
34.1
dB
SINAD
Signal to (Noise+Dist.) Ratio
fin=1MHz
34.8
dB
SINAD
Signal to (Noise+Dist.) Ratio
fin=30MHz
33.3
dB
ENOB
Effective Number of Bits
fin=1MHz
5.5
Bit
ENOB
Effective Number of Bits
fin=30MHz
5.24
Bit
1) VREFP to VREFN



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