HVVi Semiconductors, Inc.

ISO 9001:2000 Certified

EG-01-PO22X1

10235 S. 51

1/5/10

Phoenix, Az. 85044

© 2010 HVVi Semiconductors, Inc. All Rights Reserved.

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HVV1214-140 (Preliminary Datasheet)

L-Band Pulsed Power Transistor

1200-1400 MHz, 200µs Pulse, 10% Duty Cycle

For Ground Based Radar Applications

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Typical device performance under Class AB mode of operation and RF pulse conditions of 200µs pulse width and

10% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at 120W.

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Typical device performance under Class AB mode of operation and RF pulse conditions of 200µs pulse width and

10% duty cycle with VDD = 50V and IDQ = 100mA. The device was measured at 120W.