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CSD25501F3 데이터시트(PDF) 4 Page - Texas Instruments |
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CSD25501F3 데이터시트(HTML) 4 Page - Texas Instruments |
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4 / 13 page ![]() -VDS - Drain-to-Source Voltage (V) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 2 4 6 8 10 12 D002 VGS = -1.8 V VGS = -2.5 V VGS = -4.5 V -VGS - Gate-To-Source Voltage (V) 0 0.5 1 1.5 2 2.5 3 0 2 4 6 8 10 12 D003 TC = 125°C TC = 25°C TC = -55°C 4 CSD25501F3 SLPS692 – OCTOBER 2017 www.ti.com Product Folder Links: CSD25501F3 Submit Documentation Feedback Copyright © 2017, Texas Instruments Incorporated 5.3 Typical MOSFET Characteristics TA = 25°C (unless otherwise stated) Figure 1. Transient Thermal Impedance Figure 2. Saturation Characteristics VDS = –5 V Figure 3. Transfer Characteristics |
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