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TC58FVM5B2AXB65 데이터시트(PDF) 21 Page - Toshiba Semiconductor

부품명 TC58FVM5B2AXB65
상세설명  TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
PDF  63 Pages
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제조업체  TOSHIBA [Toshiba Semiconductor]
홈페이지  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

TC58FVM5B2AXB65 데이터시트(HTML) 21 Page - Toshiba Semiconductor

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TC58FVM5(T/B)(2/3)A(FT/XB)65
2003-01-29 21/63
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RANGE
UNIT
VDD
VDD Supply Voltage
−0.6~4.6
V
VIN
Input Voltage
−0.6~VDD + 0.5 (≤ 4.6)
(1)
V
VDQ
Input/Output Voltage
−0.6~VDD + 0.5 (≤ 4.6)
(1)
V
VIDH
Maximum Input Voltage for A9, OE and RESET
(2)
13.0
V
VACCH
Maximum Input Voltage for
/ACC
WP
(2)
10.5
V
PD
Power Dissipation
600
mW
Tsolder
Soldering Temperature (10s)
260
°C
Tstg
Storage Temperature
−55~150
°C
Topr
Operating Temperature
−40~85
°C
IOSHORT
Output Short-Circuit Current
(3)
100
mA
(1) This level may undershoot to
−2.0 V for periods < 20 ns, and may overshoot to +2.0 V for periods < 20 ns.
(2) Do not apply VID/VACC when the supply voltage is not within the device's recommended operating voltage range.
(3) Outputs should be shorted for no more than one second.
No more than one output should be shorted at a time.
CAPACITANCE (Ta
==== 25°C, f ==== 1 MHz)
TSOPI
SYMBOL
PARAMETER
CONDITION
MAX
UNIT
CIN
Input Pin Capacitance
VIN = 0 V
4
pF
COUT
Output Pin Capacitance
VOUT = 0 V
8
pF
CIN2
Control Pin Capacitance
VIN = 0 V
8
pF
This parameter is periodically sampled and is not tested for every device.
TFBGA
SYMBOL
PARAMETER
CONDITION
MAX
UNIT
CIN
Input Pin Capacitance
VIN = 0 V
4
pF
COUT
Output Pin Capacitance
VOUT = 0 V
8
pF
CIN2
Control Pin Capacitance
VIN = 0 V
9
pF
This parameter is periodically sampled and is not tested for every device.
RECOMMENDED DC OPERATING CONDITIONS
SYMBOL
PARAMETER
MIN
MAX
UNIT
VDD
VDD Supply Voltage
2.3
3.6
VIH
Input High-Level Voltage
0.7
× VDD
VDD + 0.3
VIL
Input Low-Level Voltage
−0.3
0.2
× VDD
VID
High-Level Voltage for A9, OE and RESET
11.4
12.6
VACC
High-Level Voltage for
/ACC
WP
8.5
9.5
V
Ta
Operating Temperature
−40
85
°C



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