| 전자부품 데이터시트 검색엔진 |
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LETQ8WM 데이터시트(PDF) 4 Page - OSRAM GmbH |
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LETQ8WM 데이터시트(HTML) 4 Page - OSRAM GmbH |
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4 / 23 page ![]() 2017-07-25 4 Version 1.0 LE T Q8WM Characteristics (TS = 25 °C; IF = 350 mA) Kennwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Wavelength at peak emission Wellenlänge d. emittierten Lichtes (typ.) λ peak 522 nm Dominant Wavelength 2) page 22 Dominantwellenlänge 2) Seite 22 (min.) (typ.) (max.) λdom λdom λdom 518 530 536 nm nm nm Spectral bandwidth at 50% Irel max Spektrale Bandbreite b. 50% I rel max (typ.) ∆λ 33 nm Viewing angle at 50 % I V Abstrahlwinkel bei 50 % I V (typ.) 2ϕ 120 ° Forward voltage 3) page 22 Durchlassspannung 3) Seite 22 (min.) (typ.) (max.) VF VF VF 3.00 3.55 3.90 V V V Reverse current Sperrstrom IR not designed for reverse operation Partial Flux acc. CIE 127:2007 Partieller Fluss (ΦV 120° = x * ΦV 180°) (typ.) Φ E/V, 120° 0.82 Radiating surface Abstrahlende Fläche (typ.) Acolor 0.70 x 0.70 mm² Real thermal resistance junction / solder point 4) page 22 Realer Wärmewiderstand Sperrschicht / Lötpad 4) Seite 22 (typ.) (max.) Rth JS real Rth JS real 16 19 K/W K/W "Electrical" thermal resistance junction / solder point 4) page 22 "Elektrischer" Wärmewiderstand Sperrschicht / Lötpad 4) Seite 22 (with efficiency η e = 14 %) (typ.) (max.) R th JS el Rth JS el 13.8 16.3 K/W K/W |
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