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ADG902 데이터시트(PDF) 2 Page - Analog Devices

부품명 ADG902
상세설명  Wideband, 40 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V, SPST Switches
PDF  12 Pages
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ADG902 데이터시트(HTML) 2 Page - Analog Devices

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REV. A
–2–
ADG901/ADG902–SPECIFICATIONS1
B Version
Parameter
Symbol
Conditions
Min
Typ
2
Max
Unit
AC ELECTRICAL CHARACTERISTICS
Operating Frequency
3
DC
2.5
GHz
–3 dB Frequency
4
4.5
GHz
Input Power
4
0 V dc Bias
7
dBm
+0.5 V dc Bias
16
dBm
Insertion Loss
S21, S12
DC to 100 MHz; VDD = 2.5 V
± 10%
0.4
0.7
dB
500 MHz; VDD = 2.5 V
± 10%
0.5
0.8
dB
1000 MHz; VDD = 2.5 V
± 10%
0.8
1.25
dB
Isolation—RF1 to RF2
S21, S12
100 MHz
60
61
dB
(CP Package)
500 MHz
43
45
dB
1000 MHz
34
40
dB
Isolation—RF1 to RF2
S21, S12
100 MHz
51
60
dB
(RM Package)
500 MHz
37.5
47
dB
1000 MHz
31
37
dB
Return Loss (On Channel)
4
S11, S22
DC to 100 MHz
20
28
dB
500 MHz
23
29
dB
1000 MHz
25
28
dB
Return Loss (Off Channel)
4
S11, S22
DC to 100 MHz
18
23
dB
500 MHz
17
21
dB
1000 MHz
15
19
dB
On Switching Time
4
tON
50% CTRL to 90% RF
3.6
6
ns
Off Switching Time
4
tOFF
50% CTRL to 10% RF
5.8
9.5
ns
Rise Time
4
tRISE
10% to 90% RF
3.1
5.5
ns
Fall Time
4
tFALL
90% to 10% RF
6.0
8.5
ns
1 dB Compression
4
P–1 dB
1000 MHz
17
dBm
Third Order Intermodulation Intercept IP3
900 MHz/901 MHz, 4 dBm
30
36
dBm
Video Feedthrough
5
2.5
mV p-p
DC ELECTRICAL CHARACTERISTICS
Input High Voltage
VINH
VDD = 2.25 V to 2.75 V
1.7
V
VINH
VDD = 1.65 V to 1.95 V
0.65 VCC
V
Input Low Voltage
VINL
VDD = 2.25 V to 2.75 V
0.7
V
VINL
VDD = 1.65 V to 1.95 V
0.35 VCC V
Input Leakage Current
II
0
≤ V
IN
≤ 2.75 V
±0.1
±1
µA
CAPACITANCE
4
RF1/RF2, RF Port On Capacitance
CRF ON
f = 1 MHz
1.2
pF
CTRL Input Capacitance
CCTRL
f = 1 MHz
2.1
pF
POWER REQUIREMENTS
VDD
1.65
2.75
V
Quiescent Power Supply Current
IDD
Digital inputs = 0 V or VDD
0.1
1
µA
NOTES
1Temperature range B Version: –40
°C to +85°C.
2Typical values are at V
DD = 2.5 V and 25
°C, unless otherwise stated.
3Point at which insertion loss degrades by 1 dB.
4Guaranteed by design, not subject to production test.
5The dc transience at the output of any port of the switch when the control voltage is switched from high to low or low to high in a 50
Ω test setup, measured with
1 ns rise time pulses and 500 MHz bandwidth.
Specifications subject to change without notice.
(VDD = 1.65 V to 2.75 V, GND = 0 V, input power = 0 dBm,
all specifications TMIN to TMAX, unless otherwise noted.)



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