www.onsemi.com

Semiconductor Components Industries, LLC, 2017

Publication Order Number:

March, 2017, Rev. 1.0

FDP2D3N10C / FDPF2D3N10C/D

1

FDP2D3N10C / FDPF2D3N10C

100 V, 222 A, 2.3 m

Ω

Features

Extremely Low Reverse Recovery Charge, Qrr

100% UIL Tested

RoHS Compliant

General Description

This

N-Channel

MV

MOSFET

is

produced

using

ON

Semiconductor’s

advanced

process

that

incorporates Shielded Gate technology. This process has been

optimized to minimize on-state resistance and yet maintain

superior switching performance with best in class soft body

diode.

Applications

Synchronous Rectification for ATX / Server / Telecom PSU

Motor drives and Uninterruptible Power Supplies

Micro Solar Inverter

G

S

D

TO-220F

D

S

G

D

S

G

TO-220

* Drain current limited by maximum junction temperature. Package limitation current is 120A.

Thermal Characteristics

Package Marking and Ordering Information

Symbol

Parameter

Ratings

Units

FDP2D3N10C

FDPF2D3N10C

Drain to Source Voltage

100

100

V

Gate to Source Voltage

±20

±20

V

Drain Current -Continuous

(Note 3)

222*

222*

A

-Continuous

(Note 3)

157*

157*

-Pulsed

(Note 1)

888

888

Single Pulse Avalanche Energy

(Note 2)

1176

mJ

Power Dissipation

214

45

W

Power Dissipation

2.4

2.4

Operating and Storage Junction Temperature Range

-55 to +175

°C

Symbol

Parameter

FDP2D3N10C

FDPF2D3N10C

Units

Thermal Resistance, Junction to Case, Max.

0.7

3.3

°C/W

Thermal Resistance, Junction to Ambient, Max.

62.5

62.5

Device Marking

Device

Package

Packing Method

Quantity

FDP2D3N10C

FDP2D3N10C

TO-220

Tube

50 units

FDPF2D3N10C

FDPF2D3N10C

TO-220F

Tube

50 units