FSB50550B datasheet(3/13 Pages) ONSEMI

3 / 13 page

Semiconductor Components Industries, LLC, 2017

www.fairchildsemi.com

FSB50550B / FSB50550BS . Rev. 1.2

www.onsemi.com

Absolute Maximum Ratings

Inverter Part (each MOSFET unless otherwise specified.)

Control Part (each HVIC unless otherwise specified.)

Bootstrap Diode Part (each bootstrap diode unless otherwise specified.)

Thermal Resistance

Total System

Notes:

1. For the measurement point of case temperature TC, please refer to Figure 4.

2. Marking “ * “ is calculation value or design factor.

Symbol

Parameter

Conditions

Rating

Unit

VDSS

Drain-Source Voltage of Each MOSFET

500

*ID 25

Each MOSFET Drain Current, Continuous TC = 25°C

3.0

*ID 80

Each MOSFET Drain Current, Continuous TC = 80°C

1.9

*IDP

Each MOSFET Drain Current, Peak

TC = 25°C, PW < 100 μs7.0

*IDRMS

Each MOSFET Drain Current, Rms

TC = 80°C, FPWM < 20 kHz

1.3

Arms

Symbol

Parameter

Conditions

Rating

Unit

VDD

Control Supply Voltage

Applied between VDD and COM

VBS

High-side Bias Voltage

Applied between VB and VS

VIN

Input Signal Voltage

Applied between VIN and COM

-0.3 ~ VDD + 0.3

Symbol

Parameter

Conditions

Rating

Unit

VRRMB

Maximum Repetitive Reverse Voltage

500

* IFB

Forward Current

TC = 25°C

0.5

* IFPB

Forward Current (Peak)

TC = 25°C, Under 1ms Pulse Width

2.0

Symbol

Parameter

Conditions

Rating

Unit

Rth(j-c)Q

Junction to Case Thermal Resistance

( Note1 )

Inverter MOSFET part, (Per Module)

2.2

°C/W

Symbol

Parameter

Conditions

Rating

Unit

Operating Junction Temperature

-40 ~ 150

°C

TSTG

Storage Temperature

-40 ~ 125

°C

VISO

Isolation Voltage

60 Hz, Sinusoidal, 1 Minute, Con-

nect Pins to Heat Sink Plate

1500

Vrms

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