| 전자부품 데이터시트 검색엔진 |
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AFF450AS45 데이터시트(PDF) 2 Page - Power Semiconductors |
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AFF450AS45 데이터시트(HTML) 2 Page - Power Semiconductors |
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2 / 3 page ![]() Thermal impedance FAST DIODE MODULE FINAL SPECIFICATION apr 17 - ISSUE : 2 SWITCHING CHARACTERISTICS 0 400 800 1200 1600 2000 0 100 200 300 400 di/dt [A/µs] REVERSE RECOVERY CHARGE Tj = 150 °C 500 A 0 100 200 300 400 500 600 700 800 900 0 100 200 300 400 di/dt [A/µs] REVERSE RECOVERY CURRENT Tj = 150 °C 500 A 0 10 20 30 40 50 60 70 80 90 0 200 400 600 800 1000 1200 di/dt [A/µs] FORWARD RECOVERY VOLTAGE IF VFR VF ta ta = Irr / (di/dt) tb = trr - ta Softness (s factor) s = tb / ta Energy dissipation during recovery Er = Vr · (Qrr - Irr ·ta / 2 ) Irr Vr tb IF d i/d t 1000 A 1000 A Tj =150°C |
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