18.08.2010

led810-pd010_40d52.doc

1 of 1

LED810/PD010-40D52

metal can sealed PD monitoring high power LED LED810/PD010-40D52 consists of a

GaAlAs LED 810 nm and a Si-PD mounted onTO-18 stem hermetically sealed with a

glass flat can, and is designed to monitor reflected light through detector for controlling its

own output power

Outer dimension (Unit:mm)

Specifications

Product Name LED Lamp with PD Monitor

Type No. LED810/PD010-40D52

Chip

Chip material GaAlAs , Si ( PIN )

Peak wavelength 810 nm

Package

Stem TO-18

Lens f2.4 Flat Glass

Can Metal Can ( Gold Plate )

Absolute Maximum Ratings [Ta=25°C]

Device

Item

Symbol

Maximum Rated

Unit

LED

Power Dissipation

170

mW

LED

Forward Current

100

mA

LED

Pulse Forward Current

500

A

LED

Reverse Voltage

5

V

PD

Reverse Voltage

100

V

Operating Temperature

-20 ~ +85

°C

Storage Temperature

-30 ~ +100

°C

Soldering Temperature

260

°C

‡Soldering condition: Soldering condition must be completed within 3 seconds at 250°C

Electro-Optical Charactaristics [Ta=25°C]

Item

Symbol

Condition

Minimum

Typical

Maximum

Unit

Forward Voltage

1.70

2.00

V

Reverse Current

10

uA

Total Radiated Power

3.0

6.0

mW

Radiant Intensity

2.5

5.0

mW/sr

Peak Wavelength

810

nm

Half Width

Dl

35

nm

Viewing Half Angle

±55

deg.

Rise Time

tr

60

ns

Fall Time

tf

40

ns

Output Current

125

250

uA

Dark Current

10

nA

‡Total Radiated Power is measured by Photodyne #500