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CFB0303 데이터시트(PDF) 1 Page - List of Unclassifed Manufacturers

부품명 CFB0303
상세설명  High Dynamic Range Low-Noise GaAs FET
PDF  2 Pages
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3236 Scott Boulevard
Santa Clara, California 95054
Phone: (408) 986-5060
Fax: (408) 986-5095
CFB0303
Features
❏ Low-Noise Figure from 0.8 to 2.0 GHz
❏ High Gain
❏ High Intercept Point
❏ Highly Stable
❏ Easily Matched to 50Ω
❏ 70 mil Package
❏ PHEMT Material
Applications
❏ Cellular Base Stations
❏ PCS Base Stations
❏ Industrial Data Networks
Description
Celeritek’s CFB0303 is a high performance GaAs
PHEMT with 600 µm gate width and 0.25 µm gate length.
The low noise figure and high intercept point of this device
makes it well suited for use as the low-noise amplifier of the
High Dynamic Range
Low-Noise GaAs FET
Advanced Product Information
June 2002
(1 of 2)
base station receiver in PCS, Japanese PHS, AMPS, GSM and
other communications systems. The CFB0303 is in an indus-
try-standard 70 mil package. It is surface mountable and
available in tape and reel.
Electrical Specifications (TA = 25°C, 2 GHz)
Parameters
Conditions
Min
Typ
Max
Units
Vd = 4V, Id = 75 mA
Noise Figure 2
0.5
0.6
dB
Associated Gain 2
@ Noise Figure
19.0
20.0
22.7
dB
Pout
1, 3
P-1
20.0
21.0
22.0
dBm
IP3
3
+5 dBm POUT/Tone
32
34
dBm
Id
3
@ P-1
83
mA
Transconductance
Vds = 4 V, Vgs = 0 V
350
mho
Saturated Drain Current
Vds = 4 V, Vgs = 0 V
80
140
240
mA
Pinchoff Voltages
Vds = 4 V, Ids = 1 mA
-0.3
V
Thermal Resistance
@ Tcase = 150°C liquid crystal test
200
°C/W
Notes: 1. @ T
case = 25°C. Derate 5 mW/°C for Tcase >25°C.
2. Input matched for low noise.
3. Matched for power transfer.
Typical Scattering Parameters (TA = 25°C, VDS = 4 V, IDS = 75 mA)
Frequency
S11
S21
S12
S22
(GHz)
Mag
Ang
Mag (dB)
Ang
MAG (dB)
ANG
MAG
ANG
0.5
0.98
-24
8.47
160
0.02
77
0.33
-9
1.0
0.94
-44
8.20
147
0.03
69
0.32
-15
2.0
0.85
-80
7.30
118
0.05
51
0.27
-36
3.0
0.76
-112
6.30
94
0.07
37
0.25
-50
4.0
0.70
-134
5.60
74
0.08
29
0.24
-55
5.0
0.64
-154
5.13
54
0.09
19
0.23
-61


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