AF03-30F

30mA 30kV 100nS

High Voltage Silicon Rectifier Diode

----------------------------------------------------------------------------------------------------------------------------- -------

GETE ELECTRONIC CO.,LTD

Http://www.getedz.com

GETAI ELECTRONIC DEVICE CO.,LTD TEL:0086-20-8184 9628

FAX:0086-20-8184 9638

2017-10 1 / 2

INTRODUCE:

HVGT high voltage silicon rectifier diodes is made

of high quality silicon wafer chip and high

reliability epoxy resin sealing structure, and

through professional testing equipment inspection

qualified after to customers.

FEATURES:

1. High reliability design.

2. Small volume.

3. High frequency.

4. Conform to RoHS and SGS.

5. Epoxy resin molded in vacuumHave

anticorrosion in the surface.

APPLICATIONS:

1. High voltage multiplier circuit

2. Electrostatic generator circuit .

3. General purpose high voltage rectifier.

4. Negative ion generator.

MECHANICAL DATA:

1. Case: epoxy resin molding.

2. Terminal: welding axis.

3. Net weight: 0.34 grams (approx).

SHAPE DISPLAY:

SIZE: (Unit:mm)

HVGT NAME: DO-312

MAXIMUM RATINGS AND CHARACTERISTICS: (Absolute Maximum Ratings)

Items

Symbols

Condition

Data Value

Units

Repetitive Peak Renerse Voltage

30

kV

Non-Repetitive Peak Renerse Voltage

--

kV

Average Forward Current Maximum

30

mA

--

mA

Non-Repetitive Forward Surge Current

3.0

A

Junction Temperature

150

°C

Allowable Operation Case Temperature

Tc

-40~+150

°C

Storage Temperature

-40~+150

°C

Items

Symbols

Condition

Data value

Units

Maximum Forward Voltage Drop

45

V

Maximum Reverse Current

2.0

uA

10

uA

Maximum Reverse Recovery Time

100

nS

Junction Capacitance

0.8

pF