| 전자부품 데이터시트 검색엔진 |
|
TC74ACT245F 데이터시트(PDF) 9 Page - Toshiba Semiconductor |
|
|
|||||||||||||||||||||||||||||
TC74ACT245F 데이터시트(HTML) 9 Page - Toshiba Semiconductor |
|
9 / 11 page ![]() TC51WHM516AXBN65,70 2002-08-22 9/11 Notes: (1) Stresses greater than listed under “Absolute Maximum Ratings” may cause permanent damage to the device. (2) All voltages are reference to GND. (3) IDDO depends on the cycle time. (4) IDDO depends on output loading. Specified values are defined with the output open condition. (5) AC measurements are assumed tR, tF = 5 ns. (6) Parameters tOD, tODO, tBD and tODW define the time at which the output goes the open condition and are not output voltage reference levels. (7) Data cannot be retained at deep power-down stand-by mode. (8) If OE is high during the write cycle, the outputs will remain at high impedance. (9) During the output state of I/O signals, input signals of reverse polarity must not be applied. (10) If CE1 or LB / UB goes LOW coincident with or after WE goes LOW, the outputs will remain at high impedance. (11) If CE1 or LB / UB goes HIGH coincident with or before WE goes HIGH, the outputs will remain at high impedance. |
|
|
링크 URL |
| ALLDATASHEET 가 귀하에 도움이 되셨나요? [ DONATE ] |
Alldatasheet는? | 광고문의 | 운영자에게 연락하기 | 개인정보취급방침 | 링크 투 데이터시트 | 링크교환 | 제조사별 검색 All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |