3P4MH datasheet(2/6 Pages) NEC

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Data Sheet D13533EJ3V0DS

3P4MH, 3P6MH

ELECTRICAL CHARACTERISTICS (Tj = 25

°°°°C, RGK = 1 kΩ

Ω

Ω)

Parameter

Symbol

Conditions

Specifications

Unit

Remarks

MIN.

TYP.

MAX.

Tj = 25

°C

−−

100

µA

−

Repeat peak reverse

current

IRRM

VRM = VRRM

Tj = 125

°C

−−

2mA

−

Tj = 25

°C

−−

100

µA

−

Repeat peak off-current

IDRM

VDM = VDRM

Tj = 125

°C

−−

2mA

−

Critical rate-of-rise of off-

state voltage

dV/dt

Tj = 125

°C, VDM = 2

VDRM

−

µs

−

On-state voltage

VTM

IT = 10 A

−−

1.6

Refer to Figure 1.

Gate trigger current

IGT

VDM = 6 V, RL = 100

Ω−

−

0.2

Refer to Figure 14.

Gate trigger voltage

VGT

VDM = 6 V, RL = 100

Ω−

−

0.8

Gate non-trigger voltage

VGD

Tj = 125

°C,

VDM =

VDRM

0.2

−−

−

Holding current

VDM = 24 V, ITM = 10 A

−

Commutating turn-off time

Tj = 125

°C,

IT = 3 A, diR/dt = 15 A/

µs

≥25 V, VDM = 2

VDRM

dVD/dt = 1 V/

µs

−

µs

−

Rth(j-c)

Junction-to-case DC

−−

°C/W Refer to Figure 13.

Thermal resistance

Rth(j-a)

Junction-to-ambient DC

−−

TYPICAL CHARACTERISTICS (Ta = 25

°°°°C)

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