MAXIMUM RATINGS: (TC=25°C unless otherwise noted)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

100

V

Collector-Emitter Voltage

VCEO

100

V

Emitter-Base Voltage

VEBO

5.0

V

Continuous Collector Current

IC

6.0

A

Peak Collector Current

ICM

10

A

Base Current

IB

2.0

A

Power Dissipation

PD

20

W

Power Dissipation (TA=25°C)

PD

1.75

W

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +150

°C

Thermal Resistance

ΘJC

6.25

°C/W

Thermal Resistance

ΘJA

71.4

°C/W

ELECTRICAL CHARACTERISTICS: (TC=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICEO

VCE=60V

50

µA

ICES

VCE=100V

10

µA

IEBO

VEB=5.0V

500

µA

BVCEO

IC=30mA

100

V

VCE(SAT)

IC=6.0A, IB=600mA

1.5

V

VBE(ON)

VCE=4.0V, IC=6.0A

2.0

V

hFE

VCE=4.0V, IC=300mA

30

hFE

VCE=4.0V, IC=3.0A

15

75

fT

VCE=10V, IC=500mA, f=1.0MHz

3.0

MHz

hfe

VCE=10V, IC=500mA, f=1.0kHz

20

CJD41C NPN

CJD42C PNP

COMPLEMENTARY SILICON

POWER TRANSISTOR

DPAK TRANSISTOR CASE

Central

Semiconductor Corp.

TM

R1 (26-September 2002)

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CJD41C,

CJD42C types are Complementary Silicon Power

Transistors manufactured by the epitaxial base

process, mounted in a surface mount package

designed for power amplifier and high speed

switching applications.

MARKING CODE: FULL PART NUMBER