MJD32C datasheet(1/1 Pages) TGS

부품명	MJD32C

상세설명	Complementary Silicon Power Ttransistors

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제조업체	TGS [Tiger Electronic Co.,Ltd]

홈페이지	http://www.tgselec.com

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Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

±100

V

Collector-Emitter Voltage

V

CEO

±100

V

Emitter-Base Voltage

V

EBO

±6.0

V

Collector Current

I

C

±3.0

A

Base Current

I

B

±1.0

A

Total Dissipation at

P

tot

20

W

Max. Operating Junction Temperature

T

j

150

oC

Storage Temperature

T

stg

-55~150

oC

MJD31C / 32C

DESCRIPTION

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Collector Cut-off Current

I

CEO

V

CB= ±100V, IE=0

—

±10

uA

Emitter Cut-off Current

I

EBO

V

EB= ±5.0V, IC=0

—

±10

uA

Collector-Emitter Sustaining Voltage

V

CEO

I

C= ±10mA, IB=0

±100

—

V

DC Current Gain

h

FE(1)

V

CE= ±4.0V, IC= ±1.0A

30

—

h

FE(2)

V

CE= ±4.0V, IC= ±3.0A

10

—

60

Collector-Emitter Saturation Voltage

V

CE(sat)

I

C= ±3.0A,IB= ±375mA

—

±1.2

V

Base-Emitter on Voltage

V

BE(on)

V

CE= ±4.0V,IC= ±3.0A

—

±1.8

V

Current Gain Bandwidth Product

f

T

V

CE= ±10V,IC= ±500mA

3.0

—

MHz

Complementary Silicon Power Ttransistors

Product specification

It is intented for use in power

amplifier and switching applications.

ELECTRICAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)

O

( Ta = 25 C)

O

TO-252

：

1

B

：

2

C

：

3

E

TIGER ELECTRONIC CO.,LTD

유사한 부품 번호 - MJD32C

제조업체	부품명	데이터시트	상세설명
ON Semiconductor	MJD32C	150Kb / 6P	SILICON POWER TRANSISTORS 1998
STMicroelectronics	MJD32C	65Kb / 5P	COMPLEMENTARY SILICON POWER TRANSISTORS May-1999
Fairchild Semiconductor	MJD32C	49Kb / 5P	General Purpose Amplifier Low Speed Switching Applications D-PAK for Surface Mount Applications
ON Semiconductor	MJD32C	81Kb / 8P	Complementary Power Transistors June, 2005 ??Rev. 6
STMicroelectronics	MJD32C	173Kb / 9P	Low voltage PNP power transistor 25-Jun-2007

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