MJD41C datasheet(1/1 Pages) TGS

부품명	MJD41C

상세설명	Complementary Silicon Power Ttransistors

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제조업체	TGS [Tiger Electronic Co.,Ltd]

홈페이지	http://www.tgselec.com

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Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

±100

V

Collector-Emitter Voltage

V

CEO

±100

V

Emitter-Base Voltage

V

EBO

±6.0

V

Collector Current

I

C

±5.0

A

Base Current

I

B

±2.0

A

Total Dissipation at

P

tot

30

W

Max. Operating Junction Temperature

T

j

150

oC

Storage Temperature

T

stg

-55~150

oC

MJD41C / 42C

DESCRIPTION

Parameter

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Collector Cut-off Current

I

CEO

V

CB= ±100V, IE=0

—

±10

uA

Emitter Cut-off Current

I

EBO

V

EB= ±5.0V, IC=0

—

±10

uA

Collector-Emitter Sustaining Voltage

V

CEO

I

C= ±10mA, IB=0

±100

—

V

DC Current Gain

h

FE(1)

V

CE= ±4.0V, IC= ±0.3A

30

—

h

FE(2)

V

CE= ±4.0V, IC= ±3.0A

25

—

100

Collector-Emitter Saturation Voltage

V

CE(sat)

I

C= ±5.0A,IB= ±500mA

—

±1.5

V

Base-Emitter on Voltage

V

BE(on)

V

CE= ±4.0V,IC= ±5.0A

—

±2.0

V

Current Gain Bandwidth Product

f

T

V

CE= ±10V,IC= ±500mA

3.0

—

MHz

Complementary Silicon Power Ttransistors

Product specification

It is intented for use in power

amplifier and switching applications.

ELECTRICAL CHARACTERISTICS

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)

O

( Ta = 25 C)

O

TO-252

：

1

B

：

2

C

：

3

E

TIGER ELECTRONIC CO.,LTD

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