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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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TSM033NA04LCR 데이터시트(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM033NA04LCR 데이터시트(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 6 page  TSM033NA04LCR Taiwan Semiconductor 1 Version: B1611 N-Channel Power MOSFET 40V, 141A, 3.3m Ω FEATURES ● Low R DS(ON) to minimize conductive losses ● Logic level ● Low gate charge for fast power switching ● 100% UIS and R g tested ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● BLDC Motor Control ● Battery Power Management ● DC-DC converter ● Secondary Synchronous Rectification KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 40 V RDS(on) (max) VGS = 10V 3.3 m Ω VGS = 4.5V 4.4 Qg 23 nC PDFN56 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T A = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (Note 1) TC = 25°C ID 141 A TA = 25°C 20 Pulsed Drain Current IDM 564 A Single Pulse Avalanche Current (Note 2) IAS 44 A Single Pulse Avalanche Energy (Note 2) EAS 290 mJ Total Power Dissipation TC = 25°C PD 125 W TC = 125°C 25 Total Power Dissipation TA = 25°C PD 2.6 W TA = 125°C 0.5 Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +150 °C THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 1 °C/W Junction to Ambient Thermal Resistance RӨJA 48 °C/W Thermal Performance Notes: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. |
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