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전자부품 데이터시트 검색엔진 |
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전자부품 데이터시트 검색엔진 |
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TSM033NB04LCR 데이터시트(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSM033NB04LCR 데이터시트(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
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1 / 7 page  TSM033NB04LCR Taiwan Semiconductor 1 Version: A1712 N-Channel Power MOSFET 40V, 121A, 3.3m Ω FEATURES ● Low R DS(ON) to minimize conductive losses ● Logic level ● Low gate charge for fast power switching ● 100% UIS and R g tested. ● 175°C Operating Junction Temperature ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● BLDC Motor Control ● Battery Power Management ● DC-DC converter ● Secondary Synchronous Rectification KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 40 V RDS(on) (max) VGS = 10V 3.3 m Ω VGS = 4.5V 4 Qg 40 nC PDFN56 Note: MSL 1 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (T A = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage VDS 40 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (Note 1) TC = 25°C ID 121 A TA = 25°C 21 Pulsed Drain Current IDM 484 A Single Pulse Avalanche Current (Note 2) IAS 34 A Single Pulse Avalanche Energy (Note 2) EAS 173 mJ Total Power Dissipation TC = 25°C PD 107 W TC = 125°C 36 Total Power Dissipation TA = 25°C PD 3.1 W TA = 125°C 1 Operating Junction and Storage Temperature Range TJ, TSTG - 55 to +175 °C THERMAL PERFORMANCE PARAMETER SYMBOL LIMIT UNIT Junction to Case Thermal Resistance RӨJC 1.4 °C/W Junction to Ambient Thermal Resistance RӨJA 48 °C/W Thermal Performance Note: RӨJA is the sum of the junction-to-case and case-to-ambient thermal resistances. The case- thermal reference is defined at the solder mounting surface of the drain pins. RӨJA is guaranteed by design while RӨCA is determined by the user’s board design. The RӨJA limit presented here is based on mounting on a 1 in 2 pad of 2 oz copper. |
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