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제조업체 부품명 데이터시트 상세설명 TriQuint Semiconductor 06035J0R7ABSTR 747Kb/8P Edge QAM Gain Stage Search Partnumber : Start with "06035J0R7ABSTR" - Total : 100 ( 1/5 Page) NXP Semiconductors 06035J0R7BBS 468Kb/15P Heterostructure Field Effect Transistor (GaAs HFET) Rev. 4.1, 10/2014 AVX Corporation 06035J0R1PBSTR 340Kb/26P Thin-Film Technology NXP Semiconductors 06035J0R4BBS 468Kb/15P Heterostructure Field Effect Transistor (GaAs HFET) Rev. 4.1, 10/2014 06035J0R6BS 497Kb/16P Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 5, 3/2016 06035J0R8BBS 468Kb/15P Heterostructure Field Effect Transistor (GaAs HFET) Rev. 4.1, 10/2014 06035J0R8BBS 571Kb/14P RF LDMOS Wideband Integrated Power Amplifiers 06035J0R8BS 497Kb/16P Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 5, 3/2016 06035J0R9BS 497Kb/16P Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 5, 3/2016 06035J100GBS 678Kb/15P Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 2, 9/2014 06035J100GBS 901Kb/18P Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 2, 9/2014 06035J1R8BBS 678Kb/15P Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 2, 9/2014 06035J1R8BBS 901Kb/18P Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 2, 9/2014 06035J1R8BS 460Kb/21P Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 9, 10/2014 06035J1R8BS 181Kb/9P Gallium Arsenide CATV Integrated Amplifier Module Rev. 8, 3/2007 06035J2R0BBS 468Kb/15P Heterostructure Field Effect Transistor (GaAs HFET) Rev. 4.1, 10/2014 06035J2R2BBS 678Kb/15P Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 2, 9/2014 06035J2R2BBS 901Kb/18P Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 2, 9/2014 06035J2R2BS 460Kb/21P Heterojunction Bipolar Transistor Technology (InGaP HBT) Rev. 9, 10/2014 06035J2R7BBS 904Kb/19P RF LDMOS Wideband Integrated Power Amplifier Rev. 3, 1/2007

06035J0R7ABSTR 데이터시트, PDF [판매업체]

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