| 제조업체 | 부품명 | 데이터시트 | 상세설명 |
 Motorola, Inc |
2N5574
|
181Kb/4P
|
SILICON BIDIRECTIOANAL TRIODE THYRISTORS
|
 New Jersey Semi-Conduct... |
2N5574
|
127Kb/1P
|
TRIACS SILICON BIDIRECTIONAL TRIODE THYRISTORS
|
|
2N5574
|
186Kb/2P
|
5-A SILICON TRIAC
|
| Search Partnumber :
Start with "2N5574" -
Total : 106 ( 1/6 Page) |
 Motorola, Inc |
2N5570
|
184Kb/4P |
BIDIRECTIONAL TRIODE THYRISTORS
|
 New Jersey Semi-Conduct... |
2N5570
|
117Kb/1P |
TRIACS BIDIRECTIONAL TRIODE THYRISTORS
|
 Motorola, Inc |
2N5571
|
181Kb/4P |
SILICON BIDIRECTIOANAL TRIODE THYRISTORS
|
 New Jersey Semi-Conduct... |
2N5571
|
127Kb/1P |
TRIACS SILICON BIDIRECTIONAL TRIODE THYRISTORS
|
 Motorola, Inc |
2N5572
|
181Kb/4P |
SILICON BIDIRECTIOANAL TRIODE THYRISTORS
|
 New Jersey Semi-Conduct... |
2N5572
|
127Kb/1P |
TRIACS SILICON BIDIRECTIONAL TRIODE THYRISTORS
|
 Motorola, Inc |
2N5573
|
181Kb/4P |
SILICON BIDIRECTIOANAL TRIODE THYRISTORS
|
 New Jersey Semi-Conduct... |
2N5573
|
127Kb/1P |
TRIACS SILICON BIDIRECTIONAL TRIODE THYRISTORS
|
|
2N5573
|
92Kb/1P |
TRIAC, V(DRM) = 200V TO 299.9V
|
 Seme LAB |
2N5575
|
11Kb/1P |
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package
|
 New Jersey Semi-Conduct... |
2N5575
|
77Kb/1P |
SI NPN POWER BJT, I(C)
|
|
2N5578
|
122Kb/1P |
SI NPN POWER BJT, I(C)
|
|
2N550
|
124Kb/1P |
NPN SWITCHING TRANSISTORS
|
 Intersil Corporation |
2N5515
|
72Kb/2P |
DUAL N CHANNEL JFET LOW NOISE AMPLIFIER
|
|
2N5515
|
4Mb/122P |
P-CHANNEL JFET
|
 New Jersey Semi-Conduct... |
2N5515
|
165Kb/1P |
LOW FREQUENCY-LOW NOISE DUAL JFETS
|
 Intersil Corporation |
2N5516
|
72Kb/2P |
DUAL N CHANNEL JFET LOW NOISE AMPLIFIER
|