| 제조업체 | 부품명 | 데이터시트 | 상세설명 |
 SAB North America |
LNB-1
|
219Kb/1P
|
Polyamide 6 Cord Grips
|
|
LNB-1/2
|
219Kb/1P
|
Polyamide 6 Cord Grips
|
| Search Partnumber :
Start with "LNB-1" -
Total : 100 ( 1/5 Page) |
 SAB North America |
LNB-1/2
|
219Kb/1P |
Polyamide 6 Cord Grips
|
|
LNB-3/4
|
219Kb/1P |
Polyamide 6 Cord Grips
|
|
LNB-3/8
|
219Kb/1P |
Polyamide 6 Cord Grips
|
 Leshan Radio Company |
LNB2294LT1G
|
606Kb/5P |
110V N-Channel Enhancement-Mode MOSFET VDS= 110V
|
|
LNB2306ELT1G
|
202Kb/5P |
N-Channel 30V (D-S) MOSFET , ESD Protected
|
|
LNB8206DT0AG
|
559Kb/5P |
N-Channel 20-V (D-S) MOSFET Low RDS(on) trench technology.
|
|
LNB83028DT0AG
|
582Kb/5P |
N-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology.
|
|
LNB8303DT0AG
|
849Kb/6P |
N-Channel Logic Level Enhancement Mode MOSFET
|
|
LNB8304DT0AG
|
937Kb/6P |
N-Channel Logic Level Enhancement Mode MOSFET
|
|
LNB8304RDT0AG
|
412Kb/5P |
N-Channel Logic Level Enhancement Mode MOSFET
|
|
LNB8308DT0AG
|
472Kb/6P |
N-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology.
|
|
LNB8350DT0AG
|
2Mb/3P |
N-Channel 30-V (D-S) MOSFET Low RDS(on) trench technology.
|
|
LNB8404DT0AG
|
656Kb/5P |
N-Channel 40-V (D-S) MOSFET Low RDS(on) trench technology.
|
|
LNB8408DT0AG
|
553Kb/7P |
N-Channel 40-V (D-S) MOSFET Low RDS(on) trench technology.
|
|
LNB8410DT0AG
|
2Mb/3P |
N-Channel 40-V (D-S) MOSFET Low RDS(on) trench technology.
|
|
LNB8462DT0AG
|
538Kb/5P |
60V N-Channel MOSFET Improved dv/dt capability
|
|
LNB8512DT0AG
|
577Kb/5P |
60V N-Channel MOSFET Improved dv/dt capability
|
|
LNB86085DT0AG
|
395Kb/5P |
N-Channel Power Trench MOSFET
|