| 제조업체 | 부품명 | 데이터시트 | 상세설명 |
 Unisonic Technologies |
2SK2751L-AE3-R
|
71Kb/4P |
N-CHANNEL JUNCTION FET
|
|
BAS21L-AE3-R
|
136Kb/3P |
GENERAL PURPOSE DIODES
|
|
MMBT4401L-AE3-R
|
117Kb/6P |
NPN GENERAL PURPOSE AMPLIFIER
|
|
MMBT4401L-AE3-R
|
274Kb/6P |
NPN GENERAL PURPOSE AMPLIFIER
|
|
MMBT5401L-AE3-R
|
84Kb/4P |
HIGH VOLTAGE SWITCHING TRANSISTOR
|
|
SK1901L-AE3-R
|
196Kb/8P |
HALL-EFFECT SWITCH FOR HIGH-TEMPERATURE OPERATION
|
|
SK1901L-AE3-R
|
222Kb/8P |
HALL-EFFECT SWITCH FOR HIGH-TEMPERATURE OPERATION
|
|
TL431L-AE3-R
|
238Kb/5P |
PROGRAMMABLE PRECISION REFERENCE
|
|
UF601L-AE3-R
|
173Kb/3P |
0.185A, 600V N-CHANNEL DEPLETION-MODE POWER MOSFET
|
|
UHS41L-AE3-R
|
112Kb/4P |
HALL-EFFECT LATCHED SENSOR
|
|
UT2301L-AE3-R
|
184Kb/4P |
2.8A, 20V P-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
 VBsemi Electronics Co.,... |
UT2301L-AE3-R
|
472Kb/9P |
P-Channel 20-V (D-S) MOSFET
|
 Unisonic Technologies |
UT2321L-AE3-R
|
230Kb/4P |
P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
|
 VBsemi Electronics Co.,... |
UT2321L-AE3-R
|
491Kb/9P |
P-Channel 30 V (D-S) MOSFET
|
 Unisonic Technologies |
UT3401L-AE3-R
|
297Kb/5P |
P-CHANNEL ENHANCEMENT MODE
|
 VBsemi Electronics Co.,... |
UT3401L-AE3-R
|
490Kb/9P |
P-Channel 30 V (D-S) MOSFET
|
 Unisonic Technologies |
UT4101L-AE3-R
|
285Kb/4P |
P-CHANNEL ENHANCEMENT MODE
|
 VBsemi Electronics Co.,... |
UT4101L-AE3-R
|
471Kb/9P |
P-Channel 20-V (D-S) MOSFET
|
|
UT6401L-AE3-R
|
1Mb/10P |
P-Channel 60-V (D-S) MOSFET
|
 Unisonic Technologies |
UT7401L-AE3-R
|
283Kb/4P |
1.2A, 30V P-CHANNEL ENHANCEMENT MODE POWER MOSFET
|