30JL-R 데이터시트, PDF

	30JL-R	30JL
일치하는	No Data	No Data
시작하는	No Data	No Data
끝나는	No Data	30JL(3) 030JL-R(1) 130JL-R(1) 330JL-R(1)
포함하는	No Data	No Data

제조업체

제조업체	부품명	데이터시트	상세설명
Toshiba Semiconductor	30JL2C41	155Kb/2P	SILICON EPITAXIAL TYPE (SWITCHING TYPE POWER SUPPLY CONVERTER & CHOPPER APPLICATIONS)
	30JL2C41	290Kb/4P	SWITCHING MODE POWER SUPPLY APPLICATON
	30JL2C41	290Kb/4P	SWITCHING MODE POWER SUPPLY APPLICATON
Vishay Siliconix	30JLA000	133Kb/7P	Axial Vitreous Leaded Wirewound Resistors 28-Mar-17

제조업체	부품명	데이터시트	상세설명
Ohmite Mfg. Co.	30J100	236Kb/3P	High Energy Wirewound
Toshiba Semiconductor	30J101	193Kb/6P	Silicon N Channel IGBT High Power Switching Applications
	30J121	294Kb/6P	TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
	30J122	498Kb/6P	4TH GENERATION IGBT CURRENT RESONANCE INVERTER SWITCHING
	30J122A	199Kb/7P	Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor rrection (PFC) Applications
	30J124	1Mb/73P	Bipolar Small-Signal Transistors
	30J126	1Mb/73P	Bipolar Small-Signal Transistors
AG Electronica	30J127	226Kb/2P	MOSFET 600V 200A IGBT
Ohmite Mfg. Co.	30J150	236Kb/3P	High Energy Wirewound
	30J15R	236Kb/3P	High Energy Wirewound
	30J27R	236Kb/3P	High Energy Wirewound
Vishay Siliconix	30J2C000	133Kb/7P	Axial Vitreous Leaded Wirewound Resistors 28-Mar-17
Ohmite Mfg. Co.	30J2R0	236Kb/3P	High Energy Wirewound
Toshiba Semiconductor	30J301	329Kb/6P	N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
	30J311	328Kb/6P	N CHANNEL IGBT(HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
	30J322	257Kb/5P	N CHANNEL MOS TYPE ( THE 4TH GENERATION CURRENT RESONANCE INVERTER SWITCHING APPLICATIONS)
Ohmite Mfg. Co.	30J33R	236Kb/3P	High Energy Wirewound
Vishay Siliconix	30J4B000	133Kb/7P	Axial Vitreous Leaded Wirewound Resistors 28-Mar-17
Vishay Siliconix	30J4C000	133Kb/7P	Axial Vitreous Leaded Wirewound Resistors 28-Mar-17
Ohmite Mfg. Co.	30J4R7	236Kb/3P	High Energy Wirewound

30JL-R 데이터시트, PDF

30JL Datasheet ,PDF

링크 URL