| 제조업체 | 부품명 | 데이터시트 | 상세설명 |
Advanced Power Electron... |
AP4501GD
|
89Kb/7P |
Low Gate Charge
|
|
AP4501GH-HF
|
120Kb/7P |
Simple Drive Requirement, Good Thermal Performance
|
|
AP4501GH-HF
|
120Kb/7P |
Simple Drive Requirement
|
|
AP4501GM
|
212Kb/8P |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP4501GM-HF
|
81Kb/7P |
Simple Drive Requirement
|
|
AP4501GM-HF
|
92Kb/8P |
Simple Drive Requirement
|
|
AP4501GSD
|
96Kb/7P |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
|
|
AP4501GSD
|
90Kb/7P |
Simple Drive Requirement
|
|
AP4501AGEM-HF
|
130Kb/7P |
Simple Drive Requirement, Low On-resistance
|
|
AP4501AGEM-HF
|
130Kb/7P |
Simple Drive Requirement
|
|
AP4501AGEM-HF
|
134Kb/8P |
Fast Switching Performance
|
|
AP4501AGEY-HF
|
124Kb/7P |
Simple Drive Requirement, Low On-resistance
|
|
AP4501AGEY-HF
|
124Kb/7P |
Simple Drive Requirement
|
|
AP4501AGEY-HF
|
136Kb/8P |
Simple Drive Requirement
|
|
AP4501AGM
|
125Kb/7P |
Simple Drive Requirement, Fast Switching Performance
|
|
AP4501AGM-HF
|
125Kb/7P |
Simple Drive Requirement, Low On-resistance
|
VBsemi Electronics Co.,... |
AP4501AGM-HF
|
1Mb/14P |
N- and P-Channel 30 V (D-S) MOSFET
|
SHENZHEN DOINGTER SEMIC... |
AP4501AGM-HF
|
1Mb/8P |
P-Chanel and N-Channel MOSFET use advanced trench technology
|
Advanced Power Electron... |
AP4501AGM-HF
|
125Kb/7P |
Simple Drive Requirement
|
|
AP4501AGM-HF
|
130Kb/8P |
Simple Drive Requirement
|
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