| 제조업체 | 부품명 | 데이터시트 | 상세설명 |
A POWER MICROELECTRONIC... |
AP6G02BLI
|
1Mb/10P |
20V N+P-Channel Enhancement Mode MOSFET
|
|
AP6G02LI
|
1Mb/10P |
20V N+P-Channel Enhancement Mode MOSFET
REV1.0 |
|
AP6G03BF
|
1Mb/10P |
30V N+P-Channel Enhancement Mode MOSFET
REV1.0 |
|
AP6G03BLI
|
1Mb/10P |
30V N+P-Channel Enhancement Mode MOSFET
REV1.0 |
|
AP6G03LI
|
1Mb/10P |
30V N+P-Channel Enhancement Mode MOSFET
|
|
AP6G03S
|
2Mb/9P |
30V N+P-Channel Enhancement Mode MOSFET
|
|
AP6G04BF
|
883Kb/10P |
40V N+P-Channel Enhancement Mode MOSFET
REV1.0 |
|
AP6G04BLI
|
912Kb/10P |
40V N+P-Channel Enhancement Mode MOSFET
REV1.0 |
|
AP6G04BS
|
948Kb/10P |
40V N+P-Channel Enhancement Mode MOSFET
REV1.0 |
|
AP6G04LI
|
946Kb/10P |
40V N+P-Channel Enhancement Mode MOSFET
REV1.1 |
|
AP6G04S
|
2Mb/10P |
40V N+P-Channel Enhancement Mode MOSFET
|
|
AP6G06S
|
1Mb/10P |
60V N+P-Channel Enhancement Mode MOSFET
REV1.0 |
|
AP600N04HTLG5
|
1Mb/7P |
40V N-Channel Enhancement Mode MOSFET
REV1.0 |
|
AP600N04TE
|
1Mb/7P |
40V N-Channel Enhancement Mode MOSFET
REV1.0 |
|
AP600N04TLG5
|
1Mb/7P |
40V N-Channel Enhancement Mode MOSFET
REV1.0 |
WJ Communication. Inc. |
AP601
|
767Kb/10P |
High Dynamic Range 1.8W 28V HBT Amplifier
|
|
AP601-F
|
767Kb/10P |
High Dynamic Range 1.8W 28V HBT Amplifier
|
|
AP601-PCB1960
|
767Kb/10P |
High Dynamic Range 1.8W 28V HBT Amplifier
|
|
AP601-PCB2140
|
767Kb/10P |
High Dynamic Range 1.8W 28V HBT Amplifier
|
|
AP601-PCB900
|
767Kb/10P |
High Dynamic Range 1.8W 28V HBT Amplifier
|
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