| 제조업체 | 부품명 | 데이터시트 | 상세설명 |
International Rectifier |
IRG4BC30FD
|
412Kb/10P |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
|
|
IRG4BC30FD
|
98Kb/35P |
Fit Rate / Equivalent Device Hours
|
Inchange Semiconductor ... |
IRG4BC30FD
|
387Kb/2P |
IGBT
|
International Rectifier |
IRG4BC30FD-S
|
1Mb/11P |
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
|
|
IRG4BC30FD-SPBF
|
1Mb/12P |
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
|
|
IRG4BC30FD-SPBF
|
1Mb/11P |
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
|
|
IRG4BC30FD-SPBF
|
1Mb/11P |
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
|
|
IRG4BC30FD1
|
361Kb/10P |
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
|
|
IRG4BC30FD1PBF
|
421Kb/11P |
Fast CoPack IGBT
|
|
IRG4BC30FD1PBF
|
415Kb/10P |
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
|
|
IRG4BC30FD1PBF
|
415Kb/10P |
INSULATED GATE BIPOLAR TRANSISTOR WITH HYPERFAST DIODE
|
|
IRG4BC30FDPBF
|
3Mb/11P |
Fast CoPack 1GBT ( VCES = 600V , VCE(on)typ. = 1.59V , VGE = 15V , IC = 17A )
|
|
IRG4BC30FDPBF
|
397Kb/10P |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
|
IRG4BC30FDPBF
|
397Kb/10P |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
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