PXAC210552FC-V1-R2 데이터시트, PDF

제조업체	부품명	데이터시트	상세설명
WOLFSPEED, INC.	PXAC210552FC-V1-R0	702Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz Rev. 05, 2023-06-28
Infineon Technologies A...	PXAC210552FC	206Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz Rev. 02, 2015-12-04
Cree, Inc	PXAC210552FC	600Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz
WOLFSPEED, INC.	PXAC210552FC	702Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 – 2170 MHz Rev. 05, 2023-06-28
Infineon Technologies A...	PXAC210552MD	466Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz Rev. 03.1, 2017-01-25
	PXAC210552ND	466Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 55 W, 28 V, 1805 ??2170 MHz Rev. 04.1, 2017-01-09
	PXAC213308FV	1Mb/8P	Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2200 MHz Rev. 02, 2016-05-04
Cree, Inc	PXAC213308FV	518Kb/8P	Thermally-Enhanced High Power RF LDMOS FET 320 W, 28 V, 2110 ??2200 MHz
Infineon Technologies A...	PXAC200902FC	489Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 ??2170 MHz Rev. 02.1, 2016-02-11
Cree, Inc	PXAC200902FC	600Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 90 W, 28 V, 1805 - 2170 MHz
Infineon Technologies A...	PXAC201202FC	1Mb/10P	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz Rev. 05.1, 2016-06-22
Cree, Inc	PXAC201202FC	590Kb/10P	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 - 2200 MHz
Infineon Technologies A...	PXAC201202FCV2R0	1Mb/10P	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz Rev. 05.1, 2016-06-22
	PXAC201202FCV2R0XTMA1	1Mb/10P	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz Rev. 05.1, 2016-06-22
	PXAC201202FCV2R250	1Mb/10P	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz Rev. 05.1, 2016-06-22
	PXAC201202FCV2R250XTMA1	1Mb/10P	Thermally-Enhanced High Power RF LDMOS FET 120 W, 28 V, 1800 ??2200 MHz Rev. 05.1, 2016-06-22
	PXAC201602FC	402Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 ??1920 MHz, 2010 ??2025 MHz Rev. 04.1, 2016-07-19
Cree, Inc	PXAC201602FC	529Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 - 1920 MHz, 2010 - 2025 MHz
Infineon Technologies A...	PXAC201602FCV1R0	402Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 ??1920 MHz, 2010 ??2025 MHz Rev. 04.1, 2016-07-19
Infineon Technologies A...	PXAC201602FCV1R0XTMA1	402Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 140 W, 28 V, 1880 ??1920 MHz, 2010 ??2025 MHz Rev. 04.1, 2016-07-19

PXAC210552FC-V1-R2 데이터시트, PDF

PXAC210552FC-V1-R2 Datasheet ,PDF

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