PXAE213708NB-V1-R2 데이터시트, PDF

제조업체	부품명	데이터시트	상세설명
Cree, Inc	PXAE213708NB	529Kb/5P	Thermally-Enhanced High Power RF LDMOS FET 400 W, 29 V, 2110 ??2180 MHz
WOLFSPEED, INC.	PXAE213708NB	707Kb/8P	Thermally-Enhanced High Power RF LDMOS FET 400 W, 48 V, 2110 – 2200 MHz Rev. 04, 2022-12-20
	PXAE261908NF	568Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 2515 – 2675 MHz Rev. 04. 2023-7-24
	PXAE261908NF-V1-R5	568Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 240 W, 28 V, 2515 – 2675 MHz Rev. 04. 2023-7-24
Cree, Inc	PXAE263708NB	289Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 400 W (P3dB), 28 V, 2620 ??2690 MHz
WOLFSPEED, INC.	PXAE263708NB	612Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 400 W (P3dB), 28 V, 2620 – 2690 MHz Rev. 04, 2023-06-23
Cree, Inc	PXAE263708NB-V1-R2	289Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 400 W (P3dB), 28 V, 2620 ??2690 MHz
WOLFSPEED, INC.	PXAE263708NB-V1-R2	612Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 400 W (P3dB), 28 V, 2620 – 2690 MHz Rev. 04, 2023-06-23
Cree, Inc	PXAE183708NB	486Kb/6P	Thermally-Enhanced High Power RF LDMOS FET 430 W, 28 V, 1805 ??1880 MHz
WOLFSPEED, INC.	PXAE183708NB	667Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 320 W, 48 V, 1805 – 1880 MHz Rev. 04, 2022-12-20
WOLFSPEED, INC.	PXAE183708NB-V1-R2	667Kb/9P	Thermally-Enhanced High Power RF LDMOS FET 320 W, 48 V, 1805 – 1880 MHz Rev. 04, 2022-12-20
Cree, Inc	PXAE184408NB	1Mb/6P	Thermally-Enhanced High Power RF LDMOS FET 450 W, 28 V, 1805 ??1880 MHz
LEMO Connectors	PXA.4A.675.CTRC11	63Kb/3P	Socket / Receptacle - Free
	PXA.4A.675.CTRC13	63Kb/3P	Socket / Receptacle - Free
	PXA.4A.675.CTRC13Z	63Kb/3P	Socket / Receptacle - Free
	PXA.4A.675.CTRC14	63Kb/3P	Socket / Receptacle - Free
	PXA.4A.675.CTRC15	63Kb/3P	Socket / Receptacle - Free
	PXA.4A.675.CTRC85	63Kb/3P	Socket / Receptacle - Free
	PXA.4A.675.CTRC85Z	63Kb/3P	Socket / Receptacle - Free
	PXA.4A.675.CTRC90	63Kb/3P	Socket / Receptacle - Free

PXAE213708NB-V1-R2 데이터시트, PDF

PXAE213708NB-V1-R2 Datasheet ,PDF

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