| 제조업체 | 부품명 | 데이터시트 | 상세설명 |
Renesas Technology Corp |
RJK03C2DPB-00-J5
|
269Kb/7P |
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
|
|
RJK03C0DPA
|
260Kb/7P |
Silicon N Channel Power MOS FET Power Switching
|
|
RJK03C0DPA
|
123Kb/7P |
Silicon N Channel Power MOS FET Power Switching
|
|
RJK03C0DPA-00-J53
|
260Kb/7P |
Silicon N Channel Power MOS FET Power Switching
|
|
RJK03C0DPA-00-J53
|
123Kb/7P |
Silicon N Channel Power MOS FET Power Switching
|
|
RJK03C0DPA-00-J5A
|
132Kb/7P |
N Channel Power MOS FET High Speed Power Switching
|
|
RJK03C0DPA
|
123Kb/7P |
Silicon N Channel Power MOS FET Power Switching
|
|
RJK03C0DPA
|
132Kb/7P |
N Channel Power MOS FET High Speed Power Switching
|
|
RJK03C1DPB
|
268Kb/7P |
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
|
|
RJK03C1DPB-00-J5
|
268Kb/7P |
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
|
|
RJK03C1DPB
|
277Kb/9P |
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
|
|
RJK03C5DPA
|
86Kb/7P |
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
|
|
RJK03C5DPA
|
126Kb/7P |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
|
RJK03C5DPA-00-J53
|
86Kb/7P |
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
|
|
RJK03C5DPA-00-J5A
|
126Kb/7P |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
|
RJK03C5DPA
|
126Kb/7P |
Built in SBD N Channel Power MOS FET High Speed Power Switching
|
|
RJK0301DPB
|
83Kb/7P |
Silicon N Channel Power MOS FET Power Switching
|
|
RJK0301DPB-00-J0
|
83Kb/7P |
Silicon N Channel Power MOS FET Power Switching
|
|
RJK0301DPB-02
|
135Kb/7P |
30V, 60A, 2.8mΩ max. Silicon N Channel Power MOS FET Power Switching
Jan 07, 2015 |
|
RJK0301DPB-02
|
136Kb/7P |
30V, 60A, 2.8m廓 max. Silicon N Channel Power MOS FET Power Switching
|
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